Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-10-10

AUTHORS

Yu. M. Shernyakov, M. V. Maksimov, A. E. Zhukov, A. V. Savelyev, V. V. Korenev, F. I. Zubov, N. Yu. Gordeev, D. A. Livshits

ABSTRACT

The lasing spectra and light-power characteristics of lasers based on InAs/InGaAs quantum dots with p-type modulation doping are studied over a broad range of pump currents. It is shown that p-type doping leads to a significant increase in the threshold current for the onset of lasing at the excited-state transition and makes it possible to attain higher output powers for lasing at the ground-state transition as compared to lasers with an undoped active region. An explanation for the observed features of two-level oscillation in quantum-dot lasers is suggested. More... »

PAGES

1331-1334

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612100132

DOI

http://dx.doi.org/10.1134/s1063782612100132

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027037502


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