Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-10-10

AUTHORS

I. I. Izhnin, K. D. Mynbaev, M. V. Yakushev, A. I. Izhnin, E. I. Fitsych, N. L. Bazhenov, A. V. Shilyaev, H. V. Savitskyy, R. Jakiela, A. V. Sorochkin, V. S. Varavin, S. A. Dvoretsky

ABSTRACT

The electrical and optical properties of epitaxial CdHgTe films grown on silicon substrates by molecular-beam epitaxy have been studied. The results of photoluminescence measurements are indicative of the high structural perfection of the films, and Hall data combined with low-energy ion treatment point to a low concentration of residual donors (∼5 × 1014 cm−3). Acceptor states supposedly related to the capture of impurities at structural defects typical of strongly lattice-mismatched heteroepitaxial structures are found in the films. More... »

PAGES

1341-1345

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612100065

DOI

http://dx.doi.org/10.1134/s1063782612100065

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1019397819


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