Electrical characteristics of n-GaAs-anode film-Ga2O3-metal structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-08-06

AUTHORS

V. M. Kalygina, K. I. Valiev, A. N. Zarubin, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

ABSTRACT

The influence of oxygen plasma and thermal annealing at 900°C on the capacitance-voltage and conductivity-voltage characteristics of n-GaAs-(anodic oxide)-metal structures is studied. In contrast to the unannealed structures, high-temperature annealing in Ar for 30 min leads to the emergence of a voltage dependence of the capacitance (C) and conductivity (G). The influence of oxygen plasma on a Ga2O3 film before annealing promotes additional variation in the capacitance-voltage and conductivity-voltage characteristics. More... »

PAGES

1003-1007

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612080088

DOI

http://dx.doi.org/10.1134/s1063782612080088

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030495554


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