Radiation-induced surface degradation of GaAs and high electron mobility transistor structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-06-05

AUTHORS

A. V. Bobyl, S. G. Konnikov, V. M. Ustinov, M. V. Baidakova, N. A. Maleev, D. A. Sakseev, R. V. Konakova, V. V. Milenin, I. V. Prokopenko

ABSTRACT

Transistor heterostructures with high-carrier-mobility have been studied. It is shown that, as the γ-irradiation dose Φ increases, their degradation occurs in the following sequence. (i) At Φ < 107 rad, the GaAs surface layer is damaged to a depth of 10 nm due to a >0.2-eV decrease in the diffusion energy of intrinsic defects and, probably, atmospheric oxygen. (ii) At Φ > 107 rad, highly structurally disordered regions larger than 1 μm are formed near microscopic defects or dislocations. (iii) At Φ > 108 rad, there occurs degradation of the internal AlGaAs/InGaAs/GaAs interfaces and the working channel. An effective method for studying the degradation processes in heterostructures is to employ a set of structural diagnostic methods to analyze processes of radiation-induced and aging degradation, in combination with theoretical simulation of the occurring processes. More... »

PAGES

814-824

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612060085

DOI

http://dx.doi.org/10.1134/s1063782612060085

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003466648


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