Experimental evaluation of the carrier lifetime in GaAs grown at low temperature View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-05

AUTHORS

A. A. Pastor, P. Yu. Serdobintsev, V. V. Chaldyshev

ABSTRACT

The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecular-beam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump-probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 ± 35) fs. More... »

PAGES

619-621

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261205017x

DOI

http://dx.doi.org/10.1134/s106378261205017x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044652301


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