Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p+-p-n+ diodes: Effect of impurity breakdown in the p-type base View Full Text


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Article Info

DATE

2012-04-18

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

The effect of impurity breakdown on the low-temperature (77–300 K) current-voltage (I–V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p+-p-n+ 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed “diode” portion of the I–V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state. More... »

PAGES

532-534

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612040112

DOI

http://dx.doi.org/10.1134/s1063782612040112

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031746120


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