Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p+-p-n+ diodes: Effect of impurity breakdown in the p-type base View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-04-18

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

The effect of impurity breakdown on the low-temperature (77–300 K) current-voltage (I–V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p+-p-n+ 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed “diode” portion of the I–V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state. More... »

PAGES

532-534

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612040112

DOI

http://dx.doi.org/10.1134/s1063782612040112

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031746120


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0202", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Atomic, Molecular, Nuclear, Particle and Plasma Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "P. A.", 
        "id": "sg:person.010230425734.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Potapov", 
        "givenName": "A. S.", 
        "id": "sg:person.07607603250.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07607603250.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonova", 
        "givenName": "T. P.", 
        "id": "sg:person.010276541134.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782610070079", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000015504", 
          "https://doi.org/10.1134/s1063782610070079"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2012-04-18", 
    "datePublishedReg": "2012-04-18", 
    "description": "The effect of impurity breakdown on the low-temperature (77\u2013300 K) current-voltage (I\u2013V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p+-p-n+ 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed \u201cdiode\u201d portion of the I\u2013V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782612040112", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "46"
      }
    ], 
    "keywords": [
      "p-type base", 
      "current-voltage characteristics", 
      "low-temperature current-voltage characteristics", 
      "impurity breakdown", 
      "high electric field", 
      "forward bias", 
      "electric field", 
      "negative differential resistance", 
      "diodes", 
      "impact ionization", 
      "differential resistance", 
      "experimental samples", 
      "temperature", 
      "characteristics", 
      "aluminum atoms", 
      "breakdown", 
      "switching", 
      "CVD", 
      "resistance", 
      "field", 
      "structure", 
      "base", 
      "effect", 
      "portion", 
      "atoms", 
      "state", 
      "ionization", 
      "samples", 
      "acceptor atoms", 
      "bias", 
      "frozen", 
      "ground state", 
      "excited states"
    ], 
    "name": "Low-temperature (77\u2013300 K) current-voltage characteristics of 4H-SiC p+-p-n+ diodes: Effect of impurity breakdown in the p-type base", 
    "pagination": "532-534", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1031746120"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782612040112"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782612040112", 
      "https://app.dimensions.ai/details/publication/pub.1031746120"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-09-02T15:55", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_564.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782612040112"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782612040112'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782612040112'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782612040112'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782612040112'


 

This table displays all metadata directly associated to this object as RDF triples.

108 TRIPLES      21 PREDICATES      58 URIs      49 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782612040112 schema:about anzsrc-for:02
2 anzsrc-for:0202
3 schema:author N271511f059144b9a9587d35d7cd15600
4 schema:citation sg:pub.10.1134/s1063782610070079
5 schema:datePublished 2012-04-18
6 schema:datePublishedReg 2012-04-18
7 schema:description The effect of impurity breakdown on the low-temperature (77–300 K) current-voltage (I–V) characteristics of 4H-SiC diodes with a p-type base has been studied. Experimental samples were fabricated from CVD-grown (chemical vapor deposition) commercial p+-p-n+ 4H-SiC structures. A high electric field in the p-type base was created by applying a forward bias to the diodes. It was found that, at temperatures of 136, 89, and 81 K, the commonly observed “diode” portion of the I–V characteristics is followed by a portion in which the current grows more rapidly due to the impact ionization of frozen-out Al acceptor atoms in the ground (unexcited) state. At temperatures of 81 and 77 K, this portion is followed by one with a negative differential resistance due to the regenerative dynistor-like switching of the diode, caused by impact ionization of aluminum atoms in the excited state.
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N5597d1ded32947ac87b1ef69e34e7d36
11 Nd2e13130436a4cbe98638a6505f7ba06
12 sg:journal.1136692
13 schema:keywords CVD
14 acceptor atoms
15 aluminum atoms
16 atoms
17 base
18 bias
19 breakdown
20 characteristics
21 current-voltage characteristics
22 differential resistance
23 diodes
24 effect
25 electric field
26 excited states
27 experimental samples
28 field
29 forward bias
30 frozen
31 ground state
32 high electric field
33 impact ionization
34 impurity breakdown
35 ionization
36 low-temperature current-voltage characteristics
37 negative differential resistance
38 p-type base
39 portion
40 resistance
41 samples
42 state
43 structure
44 switching
45 temperature
46 schema:name Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p+-p-n+ diodes: Effect of impurity breakdown in the p-type base
47 schema:pagination 532-534
48 schema:productId N31a3b294460141b18173151a72a479d0
49 Nf8bb8b4b01db4c0fa321e3e95d4f6229
50 schema:sameAs https://app.dimensions.ai/details/publication/pub.1031746120
51 https://doi.org/10.1134/s1063782612040112
52 schema:sdDatePublished 2022-09-02T15:55
53 schema:sdLicense https://scigraph.springernature.com/explorer/license/
54 schema:sdPublisher Nbb3777fbe6564f008dfbf90c77cbb7b2
55 schema:url https://doi.org/10.1134/s1063782612040112
56 sgo:license sg:explorer/license/
57 sgo:sdDataset articles
58 rdf:type schema:ScholarlyArticle
59 N271511f059144b9a9587d35d7cd15600 rdf:first sg:person.010230425734.18
60 rdf:rest Nc1302b15934947d19bf3812c97933dbf
61 N2b0d5434d6cc4d7bb878a5726ec011f2 rdf:first sg:person.010276541134.45
62 rdf:rest rdf:nil
63 N31a3b294460141b18173151a72a479d0 schema:name dimensions_id
64 schema:value pub.1031746120
65 rdf:type schema:PropertyValue
66 N5597d1ded32947ac87b1ef69e34e7d36 schema:issueNumber 4
67 rdf:type schema:PublicationIssue
68 Nbb3777fbe6564f008dfbf90c77cbb7b2 schema:name Springer Nature - SN SciGraph project
69 rdf:type schema:Organization
70 Nc1302b15934947d19bf3812c97933dbf rdf:first sg:person.07607603250.04
71 rdf:rest N2b0d5434d6cc4d7bb878a5726ec011f2
72 Nd2e13130436a4cbe98638a6505f7ba06 schema:volumeNumber 46
73 rdf:type schema:PublicationVolume
74 Nf8bb8b4b01db4c0fa321e3e95d4f6229 schema:name doi
75 schema:value 10.1134/s1063782612040112
76 rdf:type schema:PropertyValue
77 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
78 schema:name Physical Sciences
79 rdf:type schema:DefinedTerm
80 anzsrc-for:0202 schema:inDefinedTermSet anzsrc-for:
81 schema:name Atomic, Molecular, Nuclear, Particle and Plasma Physics
82 rdf:type schema:DefinedTerm
83 sg:journal.1136692 schema:issn 1063-7826
84 1090-6479
85 schema:name Semiconductors
86 schema:publisher Pleiades Publishing
87 rdf:type schema:Periodical
88 sg:person.010230425734.18 schema:affiliation grid-institutes:grid.423485.c
89 schema:familyName Ivanov
90 schema:givenName P. A.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18
92 rdf:type schema:Person
93 sg:person.010276541134.45 schema:affiliation grid-institutes:grid.423485.c
94 schema:familyName Samsonova
95 schema:givenName T. P.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45
97 rdf:type schema:Person
98 sg:person.07607603250.04 schema:affiliation grid-institutes:grid.423485.c
99 schema:familyName Potapov
100 schema:givenName A. S.
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07607603250.04
102 rdf:type schema:Person
103 sg:pub.10.1134/s1063782610070079 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000015504
104 https://doi.org/10.1134/s1063782610070079
105 rdf:type schema:CreativeWork
106 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
107 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
108 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...