2012-03-16
AUTHORSP. A. Ivanov, I. V. Grekhov, A. S. Potapov, O. I. Kon’kov, N. D. Il’inskaya, T. P. Samsonova, O. Korol’kov, N. Sleptsuk
ABSTRACTLeakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼104 cm−2), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). More... »
PAGES397-400
http://scigraph.springernature.com/pub.10.1134/s106378261203013x
DOIhttp://dx.doi.org/10.1134/s106378261203013x
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1008317789
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[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Ivanov",
"givenName": "P. A.",
"id": "sg:person.010230425734.18",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Grekhov",
"givenName": "I. V.",
"id": "sg:person.016601261017.57",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Potapov",
"givenName": "A. S.",
"id": "sg:person.07607603250.04",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07607603250.04"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kon\u2019kov",
"givenName": "O. I.",
"id": "sg:person.012364253231.30",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364253231.30"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Il\u2019inskaya",
"givenName": "N. D.",
"id": "sg:person.010015773715.60",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Samsonova",
"givenName": "T. P.",
"id": "sg:person.010276541134.45",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Department of Electronics, Tallinn University of Technology, Tallinn, Estonia",
"id": "http://www.grid.ac/institutes/grid.6988.f",
"name": [
"Department of Electronics, Tallinn University of Technology, Tallinn, Estonia"
],
"type": "Organization"
},
"familyName": "Korol\u2019kov",
"givenName": "O.",
"id": "sg:person.011420145167.17",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011420145167.17"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Department of Electronics, Tallinn University of Technology, Tallinn, Estonia",
"id": "http://www.grid.ac/institutes/grid.6988.f",
"name": [
"Department of Electronics, Tallinn University of Technology, Tallinn, Estonia"
],
"type": "Organization"
},
"familyName": "Sleptsuk",
"givenName": "N.",
"id": "sg:person.07756005775.93",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07756005775.93"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1134/s1063782609040186",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1013476925",
"https://doi.org/10.1134/s1063782609040186"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782610050180",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1043012528",
"https://doi.org/10.1134/s1063782610050180"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782611100095",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1029915690",
"https://doi.org/10.1134/s1063782611100095"
],
"type": "CreativeWork"
}
],
"datePublished": "2012-03-16",
"datePublishedReg": "2012-03-16",
"description": "Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density \u223c104 cm\u22122), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 \u03bcm between local p-type regions).",
"genre": "article",
"id": "sg:pub.10.1134/s106378261203013x",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "3",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "46"
}
],
"keywords": [
"leakage current",
"JBS structure",
"implantation of boron",
"SiC crystal structure",
"Schottky structures",
"commercial diodes",
"charge transport",
"diodes",
"current",
"Schottky",
"JBS",
"structure",
"boron",
"dislocations",
"main role",
"transport",
"implantation",
"crystal structure",
"role"
],
"name": "Leakage currents in 4H-SiC JBS diodes",
"pagination": "397-400",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1008317789"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/s106378261203013x"
]
}
],
"sameAs": [
"https://doi.org/10.1134/s106378261203013x",
"https://app.dimensions.ai/details/publication/pub.1008317789"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-20T07:27",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_564.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/s106378261203013x"
}
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22 PREDICATES
48 URIs
36 LITERALS
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