Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-03

AUTHORS

V. Y. Fominski, S. N. Grigoriev, R. I. Romanov, V. V. Zuev, V. V. Grigoriev

ABSTRACT

Thin-film structures based on gas-sensitive tungsten oxide and catalytic platinum are fabricated by room-temperature deposition on a silicon carbide wafer using pulsed laser and ion-plasma methods. Oxide layer annealing in air to 600°C caused the formation of microstructured and nanostructured crystalline states depending on the deposition conditions. Structural differences affect the electrical parameters and the stability of characteristics. The maximum response to hydrogen is detected in the structure fabricated by depositing a low-energy laser-induced flow of tungsten atoms in oxygen. The voltage shift of the currentvoltage curves for 2% H2 in air at 350°C was 4.6 V at a current of ∼10 μA. The grown structures’ metastability caused a significant decrease in the shift after long-term cyclic testing. The most stable shifts of ∼2 V at positive bias on the Pt contact were detected for oxide films deposited by ion-plasma sputtering. More... »

PAGES

401-409

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612030098

DOI

http://dx.doi.org/10.1134/s1063782612030098

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1049053446


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fominski", 
        "givenName": "V. Y.", 
        "id": "sg:person.015721576231.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015721576231.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow State Technological University", 
          "id": "https://www.grid.ac/institutes/grid.446318.c", 
          "name": [
            "Moscow State Technological University \u201cStankin\u201d, Vadkovskii per. 1, 127994, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grigoriev", 
        "givenName": "S. N.", 
        "id": "sg:person.015512456231.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015512456231.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Romanov", 
        "givenName": "R. I.", 
        "id": "sg:person.014716620177.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014716620177.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zuev", 
        "givenName": "V. V.", 
        "id": "sg:person.016437655111.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016437655111.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grigoriev", 
        "givenName": "V. V.", 
        "id": "sg:person.016233223543.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016233223543.77"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.ijhydene.2009.02.006", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014572678"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610090162", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019604194", 
          "https://doi.org/10.1134/s1063782610090162"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610090162", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019604194", 
          "https://doi.org/10.1134/s1063782610090162"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.solmat.2007.01.025", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021985243"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.apsusc.2007.02.171", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022234662"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.snb.2005.06.066", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023511716"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.nimb.2007.12.092", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028832504"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.snb.2008.03.011", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039097176"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(03)00570-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040261924"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(03)00570-7", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040261924"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610040226", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045176569", 
          "https://doi.org/10.1134/s1063782610040226"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610040226", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045176569", 
          "https://doi.org/10.1134/s1063782610040226"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2012-03", 
    "datePublishedReg": "2012-03-01", 
    "description": "Thin-film structures based on gas-sensitive tungsten oxide and catalytic platinum are fabricated by room-temperature deposition on a silicon carbide wafer using pulsed laser and ion-plasma methods. Oxide layer annealing in air to 600\u00b0C caused the formation of microstructured and nanostructured crystalline states depending on the deposition conditions. Structural differences affect the electrical parameters and the stability of characteristics. The maximum response to hydrogen is detected in the structure fabricated by depositing a low-energy laser-induced flow of tungsten atoms in oxygen. The voltage shift of the currentvoltage curves for 2% H2 in air at 350\u00b0C was 4.6 V at a current of \u223c10 \u03bcA. The grown structures\u2019 metastability caused a significant decrease in the shift after long-term cyclic testing. The most stable shifts of \u223c2 V at positive bias on the Pt contact were detected for oxide films deposited by ion-plasma sputtering.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782612030098", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "46"
      }
    ], 
    "name": "Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors", 
    "pagination": "401-409", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e9aea548ab9662e22fb01a7c14ca402f0e88b669c8cb254ce29c52397ebea990"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782612030098"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1049053446"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782612030098", 
      "https://app.dimensions.ai/details/publication/pub.1049053446"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T21:36", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8687_00000508.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782612030098"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782612030098'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782612030098'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782612030098'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782612030098'


 

This table displays all metadata directly associated to this object as RDF triples.

121 TRIPLES      21 PREDICATES      36 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782612030098 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Nc6722701acf84cafaf253f24c4407434
4 schema:citation sg:pub.10.1134/s1063782610040226
5 sg:pub.10.1134/s1063782610090162
6 https://doi.org/10.1016/j.apsusc.2007.02.171
7 https://doi.org/10.1016/j.ijhydene.2009.02.006
8 https://doi.org/10.1016/j.nimb.2007.12.092
9 https://doi.org/10.1016/j.snb.2005.06.066
10 https://doi.org/10.1016/j.snb.2008.03.011
11 https://doi.org/10.1016/j.solmat.2007.01.025
12 https://doi.org/10.1016/s0925-4005(03)00570-7
13 schema:datePublished 2012-03
14 schema:datePublishedReg 2012-03-01
15 schema:description Thin-film structures based on gas-sensitive tungsten oxide and catalytic platinum are fabricated by room-temperature deposition on a silicon carbide wafer using pulsed laser and ion-plasma methods. Oxide layer annealing in air to 600°C caused the formation of microstructured and nanostructured crystalline states depending on the deposition conditions. Structural differences affect the electrical parameters and the stability of characteristics. The maximum response to hydrogen is detected in the structure fabricated by depositing a low-energy laser-induced flow of tungsten atoms in oxygen. The voltage shift of the currentvoltage curves for 2% H2 in air at 350°C was 4.6 V at a current of ∼10 μA. The grown structures’ metastability caused a significant decrease in the shift after long-term cyclic testing. The most stable shifts of ∼2 V at positive bias on the Pt contact were detected for oxide films deposited by ion-plasma sputtering.
16 schema:genre research_article
17 schema:inLanguage en
18 schema:isAccessibleForFree false
19 schema:isPartOf Nda09a16178c248d5a6feb1fe51ea8bd1
20 Nf0b21c158d9d466f88d79e046fb012ac
21 sg:journal.1136692
22 schema:name Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensors
23 schema:pagination 401-409
24 schema:productId N2f48aedf25d54e0c86a2813b24ea6b8a
25 N3c83b0e0fbd447aba34f5625a2c98680
26 N807cfa9fac0742f1ba5edf9c4a8ead49
27 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049053446
28 https://doi.org/10.1134/s1063782612030098
29 schema:sdDatePublished 2019-04-10T21:36
30 schema:sdLicense https://scigraph.springernature.com/explorer/license/
31 schema:sdPublisher N02d971635ac14c1ba3bfea320f7dc9eb
32 schema:url http://link.springer.com/10.1134%2FS1063782612030098
33 sgo:license sg:explorer/license/
34 sgo:sdDataset articles
35 rdf:type schema:ScholarlyArticle
36 N02d971635ac14c1ba3bfea320f7dc9eb schema:name Springer Nature - SN SciGraph project
37 rdf:type schema:Organization
38 N0b11d5b390d54b6ca464d385165a53d6 rdf:first sg:person.016437655111.05
39 rdf:rest N9dc1495870714c6bb5972d5906cd738a
40 N2f48aedf25d54e0c86a2813b24ea6b8a schema:name doi
41 schema:value 10.1134/s1063782612030098
42 rdf:type schema:PropertyValue
43 N3c83b0e0fbd447aba34f5625a2c98680 schema:name dimensions_id
44 schema:value pub.1049053446
45 rdf:type schema:PropertyValue
46 N807cfa9fac0742f1ba5edf9c4a8ead49 schema:name readcube_id
47 schema:value e9aea548ab9662e22fb01a7c14ca402f0e88b669c8cb254ce29c52397ebea990
48 rdf:type schema:PropertyValue
49 N9dc1495870714c6bb5972d5906cd738a rdf:first sg:person.016233223543.77
50 rdf:rest rdf:nil
51 Nc0793fe2568441acbbe4dd4929fcf56c rdf:first sg:person.014716620177.77
52 rdf:rest N0b11d5b390d54b6ca464d385165a53d6
53 Nc6722701acf84cafaf253f24c4407434 rdf:first sg:person.015721576231.51
54 rdf:rest Nfdff4546e6184d9fb28bc56252a8cc35
55 Nda09a16178c248d5a6feb1fe51ea8bd1 schema:volumeNumber 46
56 rdf:type schema:PublicationVolume
57 Nf0b21c158d9d466f88d79e046fb012ac schema:issueNumber 3
58 rdf:type schema:PublicationIssue
59 Nfdff4546e6184d9fb28bc56252a8cc35 rdf:first sg:person.015512456231.70
60 rdf:rest Nc0793fe2568441acbbe4dd4929fcf56c
61 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
62 schema:name Engineering
63 rdf:type schema:DefinedTerm
64 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
65 schema:name Materials Engineering
66 rdf:type schema:DefinedTerm
67 sg:journal.1136692 schema:issn 1063-7826
68 1090-6479
69 schema:name Semiconductors
70 rdf:type schema:Periodical
71 sg:person.014716620177.77 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
72 schema:familyName Romanov
73 schema:givenName R. I.
74 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014716620177.77
75 rdf:type schema:Person
76 sg:person.015512456231.70 schema:affiliation https://www.grid.ac/institutes/grid.446318.c
77 schema:familyName Grigoriev
78 schema:givenName S. N.
79 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015512456231.70
80 rdf:type schema:Person
81 sg:person.015721576231.51 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
82 schema:familyName Fominski
83 schema:givenName V. Y.
84 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015721576231.51
85 rdf:type schema:Person
86 sg:person.016233223543.77 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
87 schema:familyName Grigoriev
88 schema:givenName V. V.
89 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016233223543.77
90 rdf:type schema:Person
91 sg:person.016437655111.05 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
92 schema:familyName Zuev
93 schema:givenName V. V.
94 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016437655111.05
95 rdf:type schema:Person
96 sg:pub.10.1134/s1063782610040226 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045176569
97 https://doi.org/10.1134/s1063782610040226
98 rdf:type schema:CreativeWork
99 sg:pub.10.1134/s1063782610090162 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019604194
100 https://doi.org/10.1134/s1063782610090162
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1016/j.apsusc.2007.02.171 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022234662
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1016/j.ijhydene.2009.02.006 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014572678
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1016/j.nimb.2007.12.092 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028832504
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1016/j.snb.2005.06.066 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023511716
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1016/j.snb.2008.03.011 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039097176
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1016/j.solmat.2007.01.025 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021985243
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1016/s0925-4005(03)00570-7 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040261924
115 rdf:type schema:CreativeWork
116 https://www.grid.ac/institutes/grid.183446.c schema:alternateName Moscow Engineering Physics Institute
117 schema:name National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, 115409, Moscow, Russia
118 rdf:type schema:Organization
119 https://www.grid.ac/institutes/grid.446318.c schema:alternateName Moscow State Technological University
120 schema:name Moscow State Technological University “Stankin”, Vadkovskii per. 1, 127994, Moscow, Russia
121 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...