Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-01

AUTHORS

M. M. Sobolev, I. M. Gadzhiyev, I. O. Bakshaev, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, R. V. Zolotareva, E. L. Portnoi

ABSTRACT

The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier-Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis (X-Y) and along the growth direction Z of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the Z component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice. More... »

PAGES

93-98

Journal

TITLE

Semiconductors

ISSUE

1

VOLUME

46

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612010186

DOI

http://dx.doi.org/10.1134/s1063782612010186

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050235272


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