Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-11-11

AUTHORS

A. A. Petuhov, N. D. Il’inskaya, S. S. Kizhaev, N. D. Stoyanov, Yu. P. Yakovlev

ABSTRACT

The temperature dependence (20-200°C) of the electrical and electroluminescent properties of a flip-chip light-emitting diode (LED) based on an InAs/InAsSbP heterostructure (λ ≈ 3.37 μm) has been studied. It is shown that the charge transport through the LED is governed by the tunneling-recombination (at a forward bias) and diffusion (at a reverse bias) mechanisms. The peak of the emission spectrum is due to the band-to-band recombination. As the LED is heated, the emission spectrum shifts to longer wavelengths because of the decrease in the energy gap of gallium arsenide. The emission power superexponentially decreases with increasing temperature, which is mainly due to a rise in the Auger recombination rate. More... »

PAGES

1501-1504

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611110200

DOI

http://dx.doi.org/10.1134/s1063782611110200

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020344707


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Petuhov", 
        "givenName": "A. A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Il\u2019inskaya", 
        "givenName": "N. D.", 
        "id": "sg:person.010015773715.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kizhaev", 
        "givenName": "S. S.", 
        "id": "sg:person.014367217456.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014367217456.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Stoyanov", 
        "givenName": "N. D.", 
        "id": "sg:person.014660000273.68", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014660000273.68"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yakovlev", 
        "givenName": "Yu. P.", 
        "id": "sg:person.012771052533.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012771052533.51"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.1427972", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041428889", 
          "https://doi.org/10.1134/1.1427972"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.2128447", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047072299", 
          "https://doi.org/10.1134/1.2128447"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1371629", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1016383877", 
          "https://doi.org/10.1134/1.1371629"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610020235", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041248200", 
          "https://doi.org/10.1134/s1063782610020235"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1601668", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1027996465", 
          "https://doi.org/10.1134/1.1601668"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2011-11-11", 
    "datePublishedReg": "2011-11-11", 
    "description": "The temperature dependence (20-200\u00b0C) of the electrical and electroluminescent properties of a flip-chip light-emitting diode (LED) based on an InAs/InAsSbP heterostructure (\u03bb \u2248 3.37 \u03bcm) has been studied. It is shown that the charge transport through the LED is governed by the tunneling-recombination (at a forward bias) and diffusion (at a reverse bias) mechanisms. The peak of the emission spectrum is due to the band-to-band recombination. As the LED is heated, the emission spectrum shifts to longer wavelengths because of the decrease in the energy gap of gallium arsenide. The emission power superexponentially decreases with increasing temperature, which is mainly due to a rise in the Auger recombination rate.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782611110200", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "45"
      }
    ], 
    "keywords": [
      "flip-chip light-emitting diodes", 
      "light-emitting diode", 
      "InAsSbP heterostructure", 
      "electroluminescent properties", 
      "emission power", 
      "charge transport", 
      "gallium arsenide", 
      "Auger recombination rate", 
      "diffusion mechanism", 
      "band recombination", 
      "effect of temperature", 
      "heterostructures", 
      "recombination rate", 
      "temperature", 
      "longer wavelengths", 
      "temperature dependence", 
      "emission spectra", 
      "properties", 
      "diodes", 
      "arsenide", 
      "energy gap", 
      "power", 
      "wavelength", 
      "transport", 
      "dependence", 
      "spectra", 
      "band", 
      "peak", 
      "gap", 
      "recombination", 
      "effect", 
      "rate", 
      "decrease", 
      "mechanism", 
      "rise"
    ], 
    "name": "Effect of temperature on the electroluminescent properties of mid-IR (\u03bbmax \u2248 4.4 \u03bcm) flip-chip LEDs based on an InAs/InAsSbP heterostructure", 
    "pagination": "1501-1504", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1020344707"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782611110200"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782611110200", 
      "https://app.dimensions.ai/details/publication/pub.1020344707"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T10:04", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_529.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782611110200"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

144 TRIPLES      22 PREDICATES      66 URIs      52 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782611110200 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N2c88700dc305466dbeee7fcff7a19871
5 schema:citation sg:pub.10.1134/1.1371629
6 sg:pub.10.1134/1.1427972
7 sg:pub.10.1134/1.1601668
8 sg:pub.10.1134/1.2128447
9 sg:pub.10.1134/s1063782610020235
10 schema:datePublished 2011-11-11
11 schema:datePublishedReg 2011-11-11
12 schema:description The temperature dependence (20-200°C) of the electrical and electroluminescent properties of a flip-chip light-emitting diode (LED) based on an InAs/InAsSbP heterostructure (λ ≈ 3.37 μm) has been studied. It is shown that the charge transport through the LED is governed by the tunneling-recombination (at a forward bias) and diffusion (at a reverse bias) mechanisms. The peak of the emission spectrum is due to the band-to-band recombination. As the LED is heated, the emission spectrum shifts to longer wavelengths because of the decrease in the energy gap of gallium arsenide. The emission power superexponentially decreases with increasing temperature, which is mainly due to a rise in the Auger recombination rate.
13 schema:genre article
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf N28383718b0a8402ba391bea4ee9e877c
17 N940c65ded26c493dae3629813aff3f03
18 sg:journal.1136692
19 schema:keywords Auger recombination rate
20 InAsSbP heterostructure
21 arsenide
22 band
23 band recombination
24 charge transport
25 decrease
26 dependence
27 diffusion mechanism
28 diodes
29 effect
30 effect of temperature
31 electroluminescent properties
32 emission power
33 emission spectra
34 energy gap
35 flip-chip light-emitting diodes
36 gallium arsenide
37 gap
38 heterostructures
39 light-emitting diode
40 longer wavelengths
41 mechanism
42 peak
43 power
44 properties
45 rate
46 recombination
47 recombination rate
48 rise
49 spectra
50 temperature
51 temperature dependence
52 transport
53 wavelength
54 schema:name Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure
55 schema:pagination 1501-1504
56 schema:productId N113d9292bc6c43cb8d579a3e4edc4922
57 Nbcc252a9c4b64095bc2681f43c99b94f
58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020344707
59 https://doi.org/10.1134/s1063782611110200
60 schema:sdDatePublished 2022-05-10T10:04
61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
62 schema:sdPublisher N9f28ef40282e42d188a198d27c18a78c
63 schema:url https://doi.org/10.1134/s1063782611110200
64 sgo:license sg:explorer/license/
65 sgo:sdDataset articles
66 rdf:type schema:ScholarlyArticle
67 N113d9292bc6c43cb8d579a3e4edc4922 schema:name dimensions_id
68 schema:value pub.1020344707
69 rdf:type schema:PropertyValue
70 N28383718b0a8402ba391bea4ee9e877c schema:volumeNumber 45
71 rdf:type schema:PublicationVolume
72 N2c88700dc305466dbeee7fcff7a19871 rdf:first Na0166b4d5ac64195b8f0ecfbd9fd5b94
73 rdf:rest Nd7c2c2235923473a80d6c2b3c610b187
74 N42db6ba355074ca886edec32054e9133 rdf:first sg:person.012771052533.51
75 rdf:rest rdf:nil
76 N7e248e76715341f1b8fb084a34fbc460 rdf:first sg:person.014367217456.54
77 rdf:rest N9d19caae3336428ab63b69bd1006c82e
78 N940c65ded26c493dae3629813aff3f03 schema:issueNumber 11
79 rdf:type schema:PublicationIssue
80 N9d19caae3336428ab63b69bd1006c82e rdf:first sg:person.014660000273.68
81 rdf:rest N42db6ba355074ca886edec32054e9133
82 N9f28ef40282e42d188a198d27c18a78c schema:name Springer Nature - SN SciGraph project
83 rdf:type schema:Organization
84 Na0166b4d5ac64195b8f0ecfbd9fd5b94 schema:affiliation grid-institutes:grid.423485.c
85 schema:familyName Petuhov
86 schema:givenName A. A.
87 rdf:type schema:Person
88 Nbcc252a9c4b64095bc2681f43c99b94f schema:name doi
89 schema:value 10.1134/s1063782611110200
90 rdf:type schema:PropertyValue
91 Nd7c2c2235923473a80d6c2b3c610b187 rdf:first sg:person.010015773715.60
92 rdf:rest N7e248e76715341f1b8fb084a34fbc460
93 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
94 schema:name Physical Sciences
95 rdf:type schema:DefinedTerm
96 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
97 schema:name Condensed Matter Physics
98 rdf:type schema:DefinedTerm
99 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
100 schema:name Quantum Physics
101 rdf:type schema:DefinedTerm
102 sg:journal.1136692 schema:issn 1063-7826
103 1090-6479
104 schema:name Semiconductors
105 schema:publisher Pleiades Publishing
106 rdf:type schema:Periodical
107 sg:person.010015773715.60 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Il’inskaya
109 schema:givenName N. D.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60
111 rdf:type schema:Person
112 sg:person.012771052533.51 schema:affiliation grid-institutes:grid.423485.c
113 schema:familyName Yakovlev
114 schema:givenName Yu. P.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012771052533.51
116 rdf:type schema:Person
117 sg:person.014367217456.54 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Kizhaev
119 schema:givenName S. S.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014367217456.54
121 rdf:type schema:Person
122 sg:person.014660000273.68 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Stoyanov
124 schema:givenName N. D.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014660000273.68
126 rdf:type schema:Person
127 sg:pub.10.1134/1.1371629 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016383877
128 https://doi.org/10.1134/1.1371629
129 rdf:type schema:CreativeWork
130 sg:pub.10.1134/1.1427972 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041428889
131 https://doi.org/10.1134/1.1427972
132 rdf:type schema:CreativeWork
133 sg:pub.10.1134/1.1601668 schema:sameAs https://app.dimensions.ai/details/publication/pub.1027996465
134 https://doi.org/10.1134/1.1601668
135 rdf:type schema:CreativeWork
136 sg:pub.10.1134/1.2128447 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047072299
137 https://doi.org/10.1134/1.2128447
138 rdf:type schema:CreativeWork
139 sg:pub.10.1134/s1063782610020235 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041248200
140 https://doi.org/10.1134/s1063782610020235
141 rdf:type schema:CreativeWork
142 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
143 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
144 rdf:type schema:Organization
 




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