Optical Properties of Epitaxial AlxIn1−xSb Alloy Layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-11

AUTHORS

O. S. Komkov, A. N. Semenov, D. D. Firsov, B. Ya. Meltser, V. A. Solov’ev, T. V. Popova, A. N. Pikhtin, S. V. Ivanov

ABSTRACT

Optical studies of unstrained narrow-gap AlxIn1 − xSb semiconductor alloy layers are carried out. The layers are grown by molecular-beam epitaxy on semi-insulating GaAs substrates with an AlSb buffer. The composition of the alloys is varied within the range of x = 0–0.52 and monitored by electron probe microanalysis. The band gap Eg is determined from the fundamental absorption edge with consideration for the nonparabolicity of the conduction band. The refined bowing parameter in the experimental dependence Eg(x) for the AlxIn1 − xSb alloys is 0.32 eV. This value is by 0.11 eV smaller than the commonly referred one. More... »

PAGES

1425-1429

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611110145

DOI

http://dx.doi.org/10.1134/s1063782611110145

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1050055899


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