Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-10-07

AUTHORS

V. G. Tikhomirov, N. A. Maleev, A. G. Kuzmenkov, Yu. V. Solov’ev, A. G. Gladyshev, M. M. Kulagina, V. E. Zemlyakov, K. V. Dudinov, V. B. Yankevich, A. V. Bobyl, V. M. Ustinov

ABSTRACT

The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown. More... »

PAGES

1352

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611100216

DOI

http://dx.doi.org/10.1134/s1063782611100216

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030270115


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.9905.5", 
          "name": [
            "LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tikhomirov", 
        "givenName": "V. G.", 
        "id": "sg:person.010421414251.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010421414251.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Connector Optics LLC, ul. Shatelena 26\u00c0, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Connector Optics LLC, ul. Shatelena 26\u00c0, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maleev", 
        "givenName": "N. A.", 
        "id": "sg:person.011317077151.34", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Connector Optics LLC, ul. Shatelena 26\u00c0, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Connector Optics LLC, ul. Shatelena 26\u00c0, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kuzmenkov", 
        "givenName": "A. G.", 
        "id": "sg:person.013204674115.84", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013204674115.84"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 195220, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 195220, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Solov\u2019ev", 
        "givenName": "Yu. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 195220, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "Connector Optics LLC, ul. Shatelena 26\u00c0, 194021, St. Petersburg, Russia", 
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 195220, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gladyshev", 
        "givenName": "A. G.", 
        "id": "sg:person.0727403305.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0727403305.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kulagina", 
        "givenName": "M. M.", 
        "id": "sg:person.07410421673.58", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07410421673.58"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Istok Scientific and Industrial Enterprise, ul. Vokzal\u2019naya 2a, 141190, Fryazino, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Istok Scientific and Industrial Enterprise, ul. Vokzal\u2019naya 2a, 141190, Fryazino, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zemlyakov", 
        "givenName": "V. E.", 
        "id": "sg:person.015574213725.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Istok Scientific and Industrial Enterprise, ul. Vokzal\u2019naya 2a, 141190, Fryazino, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Istok Scientific and Industrial Enterprise, ul. Vokzal\u2019naya 2a, 141190, Fryazino, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dudinov", 
        "givenName": "K. V.", 
        "id": "sg:person.07435341570.80", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07435341570.80"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.9905.5", 
          "name": [
            "LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yankevich", 
        "givenName": "V. B.", 
        "id": "sg:person.010232722170.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010232722170.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bobyl", 
        "givenName": "A. V.", 
        "id": "sg:person.01112735762.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01112735762.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-3-7091-8752-4", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048041985", 
          "https://doi.org/10.1007/978-3-7091-8752-4"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2011-10-07", 
    "datePublishedReg": "2011-10-07", 
    "description": "The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782611100216", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "45"
      }
    ], 
    "keywords": [
      "field-effect transistors", 
      "microwave field-effect transistors", 
      "static characteristics", 
      "pseudomorphic AlGaAs-InGaAs", 
      "AlGaAs-InGaAs", 
      "actual device structures", 
      "device structure", 
      "GaAs heterostructures", 
      "device parameters", 
      "numerical simulations", 
      "HEMT transistor", 
      "correct simulation", 
      "transistors", 
      "region parameters", 
      "experimental study", 
      "heterostructures", 
      "simulations", 
      "parameters", 
      "characteristics", 
      "essential necessity", 
      "software package", 
      "package", 
      "structure", 
      "effect", 
      "results", 
      "possibility", 
      "study", 
      "necessity", 
      "gate region parameters", 
      "TCAD software package", 
      "reproducible device parameters"
    ], 
    "name": "Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures", 
    "pagination": "1352", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1030270115"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782611100216"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782611100216", 
      "https://app.dimensions.ai/details/publication/pub.1030270115"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:26", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_542.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782611100216"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782611100216'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782611100216'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782611100216'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782611100216'


 

This table displays all metadata directly associated to this object as RDF triples.

179 TRIPLES      22 PREDICATES      58 URIs      48 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782611100216 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N9ba3747bb93e4636ab71ed57fc0d46b7
5 schema:citation sg:pub.10.1007/978-3-7091-8752-4
6 schema:datePublished 2011-10-07
7 schema:datePublishedReg 2011-10-07
8 schema:description The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (p-HEMT) are considered. The possibility of correct simulation of static characteristics of actual device structures of p-HEMT transistors using the TCAD software package (SILVACO Inc.) is demonstrated. The essential necessity of using selective gate-groove etching to achieve controllable and reproducible device parameters is shown.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N499bd3eb9f7d4d61815af1741e19ae99
13 Nce7767430b2c49dfb6b90c61bebc909f
14 sg:journal.1136692
15 schema:keywords AlGaAs-InGaAs
16 GaAs heterostructures
17 HEMT transistor
18 TCAD software package
19 actual device structures
20 characteristics
21 correct simulation
22 device parameters
23 device structure
24 effect
25 essential necessity
26 experimental study
27 field-effect transistors
28 gate region parameters
29 heterostructures
30 microwave field-effect transistors
31 necessity
32 numerical simulations
33 package
34 parameters
35 possibility
36 pseudomorphic AlGaAs-InGaAs
37 region parameters
38 reproducible device parameters
39 results
40 simulations
41 software package
42 static characteristics
43 structure
44 study
45 transistors
46 schema:name Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
47 schema:pagination 1352
48 schema:productId N8618246a5e294168af7eda40932f3811
49 N95ab564fdfaa49f29a8a86d6498bbf65
50 schema:sameAs https://app.dimensions.ai/details/publication/pub.1030270115
51 https://doi.org/10.1134/s1063782611100216
52 schema:sdDatePublished 2021-12-01T19:26
53 schema:sdLicense https://scigraph.springernature.com/explorer/license/
54 schema:sdPublisher Na6dc467f24c94fc8ae0f108e94944f53
55 schema:url https://doi.org/10.1134/s1063782611100216
56 sgo:license sg:explorer/license/
57 sgo:sdDataset articles
58 rdf:type schema:ScholarlyArticle
59 N0db9ff1dcb0846d6b60a54006634be9d rdf:first sg:person.01112735762.54
60 rdf:rest Ne521dc5a8b5243558cac835bcffc1d09
61 N21292cca29dc4abdbde15cb5b2610a96 rdf:first sg:person.010232722170.44
62 rdf:rest N0db9ff1dcb0846d6b60a54006634be9d
63 N212fecdb6f7b4b4b87617dad8c19d1ef rdf:first Nf4c3462700804f79a4626f4a451aecee
64 rdf:rest N36943c3c1e2f4c5fb567af519cdc6527
65 N36943c3c1e2f4c5fb567af519cdc6527 rdf:first sg:person.0727403305.59
66 rdf:rest N9cb91e28456041e79f1fbea5e8b2bea6
67 N499bd3eb9f7d4d61815af1741e19ae99 schema:volumeNumber 45
68 rdf:type schema:PublicationVolume
69 N586bb06e3a2f4a5eb2cbe010f2bddc82 rdf:first sg:person.011317077151.34
70 rdf:rest Nb47aadd14eef42bfa3c24d23cb4c1580
71 N8618246a5e294168af7eda40932f3811 schema:name doi
72 schema:value 10.1134/s1063782611100216
73 rdf:type schema:PropertyValue
74 N95ab564fdfaa49f29a8a86d6498bbf65 schema:name dimensions_id
75 schema:value pub.1030270115
76 rdf:type schema:PropertyValue
77 N9ba3747bb93e4636ab71ed57fc0d46b7 rdf:first sg:person.010421414251.74
78 rdf:rest N586bb06e3a2f4a5eb2cbe010f2bddc82
79 N9cb91e28456041e79f1fbea5e8b2bea6 rdf:first sg:person.07410421673.58
80 rdf:rest Nd9c30a0954c34d7db013416b667f4de2
81 Na6dc467f24c94fc8ae0f108e94944f53 schema:name Springer Nature - SN SciGraph project
82 rdf:type schema:Organization
83 Nb47aadd14eef42bfa3c24d23cb4c1580 rdf:first sg:person.013204674115.84
84 rdf:rest N212fecdb6f7b4b4b87617dad8c19d1ef
85 Nc72207f021ed455694dff3ccc83f6c96 rdf:first sg:person.07435341570.80
86 rdf:rest N21292cca29dc4abdbde15cb5b2610a96
87 Nce7767430b2c49dfb6b90c61bebc909f schema:issueNumber 10
88 rdf:type schema:PublicationIssue
89 Nd9c30a0954c34d7db013416b667f4de2 rdf:first sg:person.015574213725.02
90 rdf:rest Nc72207f021ed455694dff3ccc83f6c96
91 Ne521dc5a8b5243558cac835bcffc1d09 rdf:first sg:person.010616411412.30
92 rdf:rest rdf:nil
93 Nf4c3462700804f79a4626f4a451aecee schema:affiliation grid-institutes:grid.35135.31
94 schema:familyName Solov’ev
95 schema:givenName Yu. V.
96 rdf:type schema:Person
97 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
98 schema:name Physical Sciences
99 rdf:type schema:DefinedTerm
100 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
101 schema:name Condensed Matter Physics
102 rdf:type schema:DefinedTerm
103 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
104 schema:name Quantum Physics
105 rdf:type schema:DefinedTerm
106 sg:journal.1136692 schema:issn 1063-7826
107 1090-6479
108 schema:name Semiconductors
109 schema:publisher Pleiades Publishing
110 rdf:type schema:Periodical
111 sg:person.010232722170.44 schema:affiliation grid-institutes:grid.9905.5
112 schema:familyName Yankevich
113 schema:givenName V. B.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010232722170.44
115 rdf:type schema:Person
116 sg:person.010421414251.74 schema:affiliation grid-institutes:grid.9905.5
117 schema:familyName Tikhomirov
118 schema:givenName V. G.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010421414251.74
120 rdf:type schema:Person
121 sg:person.010616411412.30 schema:affiliation grid-institutes:grid.423485.c
122 schema:familyName Ustinov
123 schema:givenName V. M.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
125 rdf:type schema:Person
126 sg:person.01112735762.54 schema:affiliation grid-institutes:grid.423485.c
127 schema:familyName Bobyl
128 schema:givenName A. V.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01112735762.54
130 rdf:type schema:Person
131 sg:person.011317077151.34 schema:affiliation grid-institutes:None
132 schema:familyName Maleev
133 schema:givenName N. A.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011317077151.34
135 rdf:type schema:Person
136 sg:person.013204674115.84 schema:affiliation grid-institutes:None
137 schema:familyName Kuzmenkov
138 schema:givenName A. G.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013204674115.84
140 rdf:type schema:Person
141 sg:person.015574213725.02 schema:affiliation grid-institutes:None
142 schema:familyName Zemlyakov
143 schema:givenName V. E.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015574213725.02
145 rdf:type schema:Person
146 sg:person.0727403305.59 schema:affiliation grid-institutes:grid.35135.31
147 schema:familyName Gladyshev
148 schema:givenName A. G.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0727403305.59
150 rdf:type schema:Person
151 sg:person.07410421673.58 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Kulagina
153 schema:givenName M. M.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07410421673.58
155 rdf:type schema:Person
156 sg:person.07435341570.80 schema:affiliation grid-institutes:None
157 schema:familyName Dudinov
158 schema:givenName K. V.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07435341570.80
160 rdf:type schema:Person
161 sg:pub.10.1007/978-3-7091-8752-4 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048041985
162 https://doi.org/10.1007/978-3-7091-8752-4
163 rdf:type schema:CreativeWork
164 grid-institutes:None schema:alternateName Connector Optics LLC, ul. Shatelena 26À, 194021, St. Petersburg, Russia
165 Istok Scientific and Industrial Enterprise, ul. Vokzal’naya 2a, 141190, Fryazino, Moscow oblast, Russia
166 schema:name Connector Optics LLC, ul. Shatelena 26À, 194021, St. Petersburg, Russia
167 Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
168 Istok Scientific and Industrial Enterprise, ul. Vokzal’naya 2a, 141190, Fryazino, Moscow oblast, Russia
169 rdf:type schema:Organization
170 grid-institutes:grid.35135.31 schema:alternateName Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 195220, St. Petersburg, Russia
171 schema:name Connector Optics LLC, ul. Shatelena 26À, 194021, St. Petersburg, Russia
172 Nanotechnology Research and Education Center, St. Petersburg Academic University, Russian Academy of Sciences, ul. Khlopina 8/3, 195220, St. Petersburg, Russia
173 rdf:type schema:Organization
174 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
175 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
176 rdf:type schema:Organization
177 grid-institutes:grid.9905.5 schema:alternateName LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, 197376, St. Petersburg, Russia
178 schema:name LETI St. Petersburg State Electrotechnical University, ul. Prof. Popova 5, 197376, St. Petersburg, Russia
179 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...