Photoelectric properties of porous GaN/SiC heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-10

AUTHORS

M. G. Mynbaeva, A. A. Sitnikova, K. D. Mynbaev

ABSTRACT

The origin of photoconductivity in porous structures formed by anodization of GaN/SiC heterostructures has been studied. It is shown by comparing the photoelectric, optical, electrical, and structural properties of untreated and anodized heterostructures that this effect is due to the presence of charged states at the interface between GaN and SiC that are specific to the anodization conditions. More... »

PAGES

1317

Journal

TITLE

Semiconductors

ISSUE

10

VOLUME

45

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611100149

DOI

http://dx.doi.org/10.1134/s1063782611100149

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031640166


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