Ontology type: schema:ScholarlyArticle
2011-10-07
AUTHORSP. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. Korol’kov, N. Sleptsuk
ABSTRACTDeep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8–9) × 1014 cm−3. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the p-n junction. More... »
PAGES1306
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DOIhttp://dx.doi.org/10.1134/s1063782611100101
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