A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation View Full Text


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Article Info

DATE

2011-10-07

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. Korol’kov, N. Sleptsuk

ABSTRACT

Deep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8–9) × 1014 cm−3. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the p-n junction. More... »

PAGES

1306

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611100101

DOI

http://dx.doi.org/10.1134/s1063782611100101

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007661636


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