Defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-09-17

AUTHORS

I. I. Izhnin, A. I. Izhnin, E. I. Fitsych, N. A. Smirnova, I. A. Denisov, M. Pociask, K. D. Mynbaev

ABSTRACT

Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers (∼1017 cm−3) created in the films. These defects decompose in ∼103 min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to ∼1014 cm−3) for the films under study. More... »

PAGES

1124

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611090090

DOI

http://dx.doi.org/10.1134/s1063782611090090

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020002189


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