Ga2O3 films formed by electrochemical oxidation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-08-18

AUTHORS

V. M. Kalygina, A. N. Zarubin, Ye. P. Nayden, V. A. Novikov, Y. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

ABSTRACT

The effect of oxygen plasma on gallium oxide films formed by electrochemical oxidation of n-GaAs wafers with a donor concentration Nd = (1–2) × 1016 cm−3 has been investigated. It is shown that the treatment in an oxygen plasma at a temperature of 50–90°C increases the concentration of β-phase crystallites, which causes an increase in the permittivity, a decrease in the dielectric dissipation factor, and a change in the conductivity of GaAs-〈gallium oxide〉-metal structures. More... »

PAGES

1097

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611080112

DOI

http://dx.doi.org/10.1134/s1063782611080112

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1008345220


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