Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy View Full Text


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Article Info

DATE

2011-07-08

AUTHORS

K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omskii, N. N. Mikhailov, M. V. Yakushev, A. V. Sorochkin, V. G. Remesnik, S. A. Dvoretsky, V. S. Varavin, Yu. G. Sidorov

ABSTRACT

Photoluminescence (PL) of Hg1 − xCdxTe-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap. More... »

PAGES

872-879

References to SciGraph publications

  • 2010-04-16. HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization in JOURNAL OF ELECTRONIC MATERIALS
  • 2010-02-06. HgCdTe: Recent Trends in the Ultimate IR Semiconductor in JOURNAL OF ELECTRONIC MATERIALS
  • 2005-06. Model for minority carrier lifetimes in doped HgCdTe in JOURNAL OF ELECTRONIC MATERIALS
  • 2010-04-21. Photoluminescence Studies of HgCdTe Epilayers in JOURNAL OF ELECTRONIC MATERIALS
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    http://scigraph.springernature.com/pub.10.1134/s1063782611070153

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    http://dx.doi.org/10.1134/s1063782611070153

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