Fabrication of ordered GaAs nanowhiskers using electron-beam lithography View Full Text


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Article Info

DATE

2011-06-18

AUTHORS

I. P. Soshnikov, D. E. Afanas’ev, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya, Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov, V. M. Ustinov

ABSTRACT

The formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10–150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place. More... »

PAGES

822-827

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611060236

DOI

http://dx.doi.org/10.1134/s1063782611060236

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009637939


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