Ontology type: schema:ScholarlyArticle
2011-06-18
AUTHORSI. P. Soshnikov, D. E. Afanas’ev, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya, Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov, V. M. Ustinov
ABSTRACTThe formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10–150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place. More... »
PAGES822-827
http://scigraph.springernature.com/pub.10.1134/s1063782611060236
DOIhttp://dx.doi.org/10.1134/s1063782611060236
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