Fabrication of improved-quality seed crystals for growth of bulk silicon carbide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-06-18

AUTHORS

M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova, D. P. Litvin, A. V. Vasiliev, T. Yu. Chemekova, Yu. N. Makarov

ABSTRACT

Sublimation epitaxy in a vacuum has been used to grow silicon carbide layers with a low defect concentration and with SiC wafers cut from single-crystal ingots produced by the modified Lely method serving as substrates. It is concluded on the basis of a comparative study of the distribution of structural defects in substrates and epitaxial layers that an isomorphic pair composed of an epitaxial layer and a single-crystal SiC substrate, which is a composite of materials produced by the same method (sublimation synthesis), but in different technological conditions, is promising for fabrication of improved-quality silicon carbide seed crystals. More... »

PAGES

828-831

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611060157

DOI

http://dx.doi.org/10.1134/s1063782611060157

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051199127


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