Ontology type: schema:ScholarlyArticle
2011-06-18
AUTHORSV. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich, B. Ya. Ber, D. Yu. Kazantsev
ABSTRACTThe methods of high-resolution X-ray diffraction have been used to study the multilayered structures in an InxGa1 − xN/GaN system grown by the method of metal-organic chemical-vapor deposition. A correlation between the strain state (relaxation) of the system, the indium content within quantum wells, the ratio of the barrier/well thicknesses, and the number of quantum wells in the active superlattice is established. It is shown that partial relaxation is observed even in a structure with one quantum well. The results we obtained indicate that the relaxation processes are bound to appreciably affect the optical characteristics of devices. More... »
PAGES753-760
http://scigraph.springernature.com/pub.10.1134/s1063782611060121
DOIhttp://dx.doi.org/10.1134/s1063782611060121
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