Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered ... View Full Text


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Article Info

DATE

2011-06-18

AUTHORS

V. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich, B. Ya. Ber, D. Yu. Kazantsev

ABSTRACT

The methods of high-resolution X-ray diffraction have been used to study the multilayered structures in an InxGa1 − xN/GaN system grown by the method of metal-organic chemical-vapor deposition. A correlation between the strain state (relaxation) of the system, the indium content within quantum wells, the ratio of the barrier/well thicknesses, and the number of quantum wells in the active superlattice is established. It is shown that partial relaxation is observed even in a structure with one quantum well. The results we obtained indicate that the relaxation processes are bound to appreciably affect the optical characteristics of devices. More... »

PAGES

753-760

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611060121

DOI

http://dx.doi.org/10.1134/s1063782611060121

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044822008


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