Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-06-18

AUTHORS

P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, O. I. Ronghin, A. A. Sitnikova, A. A. Shakhmin, B. Ya. Ber, D. Yu. Kazantsev, A. Yu. Egorov, V. E. Zemlyakov, S. G. Konnikov

ABSTRACT

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schrödinger and Poisson equations. More... »

PAGES

811-817

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611060078

DOI

http://dx.doi.org/10.1134/s1063782611060078

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013917039


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