Ontology type: schema:ScholarlyArticle
2011-04-16
AUTHORSYu. B. Samsonenko, G. E. Cirlin, A. I. Khrebtov, A. D. Bouravleuv, N. K. Polyakov, V. P. Ulin, V. G. Dubrovskii, P. Werner
ABSTRACTThe processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630°C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610°C. An increase in the temperature to 640°C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented. More... »
PAGES431-435
http://scigraph.springernature.com/pub.10.1134/s1063782611040191
DOIhttp://dx.doi.org/10.1134/s1063782611040191
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