Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces View Full Text


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Article Info

DATE

2011-04-16

AUTHORS

Yu. B. Samsonenko, G. E. Cirlin, A. I. Khrebtov, A. D. Bouravleuv, N. K. Polyakov, V. P. Ulin, V. G. Dubrovskii, P. Werner

ABSTRACT

The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630°C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610°C. An increase in the temperature to 640°C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented. More... »

PAGES

431-435

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611040191

DOI

http://dx.doi.org/10.1134/s1063782611040191

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1024878902


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