Passivation of infrared photodiodes with alcoholic sulfide solution View Full Text


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Article Info

DATE

2011-04-16

AUTHORS

M. V. Lebedev, V. V. Sherstnev, E. V. Kunitsyna, I. A. Andreev, Yu. P. Yakovlev

ABSTRACT

The effect of passivation with the solution of sodium sulfide (Na2S) in isopropyl alcohol on the room-temperature performance of the GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes is investigated. After such a treatment the dark current density of the GaInAsSb/GaAlAsSb photodiodes at a reverse bias of 0.1 V is reduced from 5.5 × 10−2 to 2.1 × 10−3 A/cm2 and a zero-bias resistance-area product (R0A) is improved from 1.0 to 25.6 Ω cm2. For the InAs/InAsSbP photodiodes, the dark current density at U = −0.1 V is decreased from 1.34 to 8.1 × 10−1 A/cm2, while the R0A value increases from 4.4 × 10−2 to 7.3 × 10−2 Ω cm2. The method offers long-term stability of the photodiode performance. More... »

PAGES

526-529

References to SciGraph publications

  • 2000-03. Surface recombination and sulfide passivation of GaN in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782611040142

    DOI

    http://dx.doi.org/10.1134/s1063782611040142

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