Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-03

AUTHORS

A. A. Altukhov, A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, V. E. Zemlyakov, K. N. Ziablyuk, A. V. Mitenkin, A. B. Muchnikov, D. B. Radishev, A. K. Ratnikova, Yu. Yu. Fedorov

ABSTRACT

The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm2 V−1 s−1 (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given. More... »

PAGES

392

Journal

TITLE

Semiconductors

ISSUE

3

VOLUME

45

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261103002x

DOI

http://dx.doi.org/10.1134/s106378261103002x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034327680


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