Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2011-02

AUTHORS

A. F. Tsatsulnikov, W. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, V. S. Sizov, S. O. Usov, Yu. G. Musikhin, D. Gerthsen

ABSTRACT

Results of studies of hydrogen addition during the growth of thin (∼2–3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a decrease in the average content of In, hydrogen addition leads to varying the local phase separation in the InGaN layers. Hydrogen addition during the growth of the InGaN layers initially causes suppression of the local phase separation, while hydrogen addition during interruptions of the growth after deposition of the InGaN films leads to a decrease in the size of the formed local In-enriched regions and to a certain increase in the local content of the In atoms. More... »

PAGES

271-276

Journal

TITLE

Semiconductors

ISSUE

2

VOLUME

45

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782611020230

DOI

http://dx.doi.org/10.1134/s1063782611020230

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034119043


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