Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-11-19

AUTHORS

N. A. Kalyuzhnyy, A. S. Gudovskikh, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, V. M. Andreev

ABSTRACT

Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and “light” current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by ∼1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of ∼1.5 A/cm2 due to the use of the concentrated solar radiation. More... »

PAGES

1520-1528

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261011028x

DOI

http://dx.doi.org/10.1134/s106378261011028x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1051899742


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