Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions View Full Text


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Article Info

DATE

2010-11-19

AUTHORS

S. V. Morozov, K. V. Marem’yanin, I. V. Erofeeva, A. N. Yablonskiy, A. V. Antonov, L. V. Gavrilenko, V. V. Rumyantsev, V. I. Gavrilenko

ABSTRACT

Relaxation times of impurity photoconductivity in p-Ge samples excited by a nanosecond narrow-band source of terahertz radiation are studied at various bias voltages. It is shown that the relaxation time in prebreakdown fields increases with the applied electric field and decreases as the impurity breakdown field is exceeded. Nonmonotonic photoconductivity kinetics is observed in the studied samples differing by acceptor concentrations and degrees of compensation when approaching the impurity breakdown field. More... »

PAGES

1476-1479

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610110199

DOI

http://dx.doi.org/10.1134/s1063782610110199

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1030898893


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