Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-10-12

AUTHORS

A. A. Lebedev, A. M. Strel’chuk, D. V. Shamshur, G. A. Oganesyan, S. P. Lebedev, M. G. Mynbaeva, A. V. Sadokhin

ABSTRACT

Multigraphene films grown by sublimation of the surface of semi-insulating 6H-SiC substrates in a vacuum have been studied. The films exhibit a semiconductor-type conductivity. A conclusion is made that this type of conduction is supposedly determined by defects present between separate graphene crystals constituting the carbon layers under study.

PAGES

1389-1391

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261010026x

DOI

http://dx.doi.org/10.1134/s106378261010026x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023501605


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