Formation of composite InGaN/GaN/InAlN quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-10

AUTHORS

A. F. Tsatsul’nikov, E. E. Zavarin, N. V. Kryzhanovskaya, W. V. Lundin, A. V. Saharov, S. O. Usov, P. N. Brunkov, V. V. Goncharov, N. A. Cherkashin, M. Hytch

ABSTRACT

Composite InGaN/GaN/InAlN quantum dots (QDs) have been formed and studied. The structural properties of thin InAlN layers overgrown with GaN have been analyzed, and it is shown that 3D islands with lateral sizes of ∼(20–30) nm are formed in structures of this kind. It is demonstrated that deposition of a thin InGaN layer onto the surface of InAlN islands overgrown with a thin GaN layer leads to transformation of the continuous InGaN layer to an array of isolated QDs with lateral sizes of 20–30 nm and heights of 2–3 nm. The position of these QDs in the growth direction correlates with that of InAlN islands. More... »

PAGES

1338-1341

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610100167

DOI

http://dx.doi.org/10.1134/s1063782610100167

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015826455


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