Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-08-18

AUTHORS

I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, A. V. Rozkov, N. M. Shmidt, Sh. A. Yusupova, J. H. Je

ABSTRACT

A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si1 − xGex wafers cut from Czochralski-grown crystals, is suggested. Si1 − xGex layers no larger than 10 μm thick in SiGe/SiO2/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si1 − xGex layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250°C are not accompanied by degradation of structural and electrical characteristics of Si1 − xGex layers. More... »

PAGES

1101-1105

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610080269

DOI

http://dx.doi.org/10.1134/s1063782610080269

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1034512637


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grekhov", 
        "givenName": "I. V.", 
        "id": "sg:person.016601261017.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kostina", 
        "givenName": "L. S.", 
        "id": "sg:person.014314546743.28", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014314546743.28"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.49100.3c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Argunova", 
        "givenName": "T. S.", 
        "id": "sg:person.012515412141.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012515412141.87"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Belyakova", 
        "givenName": "E. I.", 
        "id": "sg:person.014455135555.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014455135555.40"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rozkov", 
        "givenName": "A. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shmidt", 
        "givenName": "N. M.", 
        "id": "sg:person.011531160044.65", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011531160044.65"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yusupova", 
        "givenName": "Sh. A.", 
        "id": "sg:person.011127073267.25", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011127073267.25"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea", 
          "id": "http://www.grid.ac/institutes/grid.49100.3c", 
          "name": [
            "Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Je", 
        "givenName": "J. H.", 
        "id": "sg:person.0760167125.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0760167125.40"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2010-08-18", 
    "datePublishedReg": "2010-08-18", 
    "description": "A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si1 \u2212 xGex wafers cut from Czochralski-grown crystals, is suggested. Si1 \u2212 xGex layers no larger than 10 \u03bcm thick in SiGe/SiO2/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si1 \u2212 xGex layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250\u00b0C are not accompanied by degradation of structural and electrical characteristics of Si1 \u2212 xGex layers.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782610080269", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "insulator substrates", 
      "direct bonding", 
      "Ge content", 
      "chemical mechanical polishing", 
      "xGex layers", 
      "heat treatment procedures", 
      "Si wafers", 
      "mechanical polishing", 
      "electrical characteristics", 
      "electrical properties", 
      "thermal oxidation", 
      "Si composition", 
      "wafers", 
      "Si1", 
      "SiGe", 
      "layer", 
      "substrate", 
      "new method", 
      "polishing", 
      "bonding", 
      "xGex", 
      "Czochralski", 
      "thick", 
      "properties", 
      "degradation", 
      "content", 
      "treatment procedures", 
      "oxidation", 
      "characteristics", 
      "method", 
      "crystals", 
      "composition", 
      "increase", 
      "procedure"
    ], 
    "name": "Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding", 
    "pagination": "1101-1105", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1034512637"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782610080269"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782610080269", 
      "https://app.dimensions.ai/details/publication/pub.1034512637"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-12-01T06:27", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221201/entities/gbq_results/article/article_498.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782610080269"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

147 TRIPLES      20 PREDICATES      59 URIs      50 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782610080269 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N650d0b5d5b164290889dcd6a42c84b38
5 schema:datePublished 2010-08-18
6 schema:datePublishedReg 2010-08-18
7 schema:description A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si1 − xGex wafers cut from Czochralski-grown crystals, is suggested. Si1 − xGex layers no larger than 10 μm thick in SiGe/SiO2/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si1 − xGex layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250°C are not accompanied by degradation of structural and electrical characteristics of Si1 − xGex layers.
8 schema:genre article
9 schema:isAccessibleForFree false
10 schema:isPartOf N39da416db6e24f22b5956750ec68a24f
11 Ne06f19b1a2ba4549bd5caf36319a7d02
12 sg:journal.1136692
13 schema:keywords Czochralski
14 Ge content
15 Si composition
16 Si wafers
17 Si1
18 SiGe
19 bonding
20 characteristics
21 chemical mechanical polishing
22 composition
23 content
24 crystals
25 degradation
26 direct bonding
27 electrical characteristics
28 electrical properties
29 heat treatment procedures
30 increase
31 insulator substrates
32 layer
33 mechanical polishing
34 method
35 new method
36 oxidation
37 polishing
38 procedure
39 properties
40 substrate
41 thermal oxidation
42 thick
43 treatment procedures
44 wafers
45 xGex
46 xGex layers
47 schema:name Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding
48 schema:pagination 1101-1105
49 schema:productId N40c5b35dee324d15bd1e0327ad76ff64
50 Neee9928f580e4795b46bff1424df3d4a
51 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034512637
52 https://doi.org/10.1134/s1063782610080269
53 schema:sdDatePublished 2022-12-01T06:27
54 schema:sdLicense https://scigraph.springernature.com/explorer/license/
55 schema:sdPublisher Nc04e9820ec794a6eabc0d9108fd8f2bc
56 schema:url https://doi.org/10.1134/s1063782610080269
57 sgo:license sg:explorer/license/
58 sgo:sdDataset articles
59 rdf:type schema:ScholarlyArticle
60 N06c09abf51b34482ae5b8561656eb03e rdf:first N2d3b65d3071144058efcf19da0b33d4d
61 rdf:rest N462908b67f514850aaf81763c7147c2e
62 N2d3b65d3071144058efcf19da0b33d4d schema:affiliation grid-institutes:grid.423485.c
63 schema:familyName Rozkov
64 schema:givenName A. V.
65 rdf:type schema:Person
66 N38f36396271449d99b8a15847f95bc4e rdf:first sg:person.014455135555.40
67 rdf:rest N06c09abf51b34482ae5b8561656eb03e
68 N39da416db6e24f22b5956750ec68a24f schema:volumeNumber 44
69 rdf:type schema:PublicationVolume
70 N40c5b35dee324d15bd1e0327ad76ff64 schema:name doi
71 schema:value 10.1134/s1063782610080269
72 rdf:type schema:PropertyValue
73 N462908b67f514850aaf81763c7147c2e rdf:first sg:person.011531160044.65
74 rdf:rest Ndcaaec2aa41a45709d9ab4a2c0728dcb
75 N58100a013e874d6a8508f26f013f9cf7 rdf:first sg:person.0760167125.40
76 rdf:rest rdf:nil
77 N650d0b5d5b164290889dcd6a42c84b38 rdf:first sg:person.016601261017.57
78 rdf:rest Nb72696fe2d3f4e8bbd5506e6b8448164
79 Nb72696fe2d3f4e8bbd5506e6b8448164 rdf:first sg:person.014314546743.28
80 rdf:rest Nfb94c4a91de94102a4fe51b22ddaef18
81 Nc04e9820ec794a6eabc0d9108fd8f2bc schema:name Springer Nature - SN SciGraph project
82 rdf:type schema:Organization
83 Ndcaaec2aa41a45709d9ab4a2c0728dcb rdf:first sg:person.011127073267.25
84 rdf:rest N58100a013e874d6a8508f26f013f9cf7
85 Ne06f19b1a2ba4549bd5caf36319a7d02 schema:issueNumber 8
86 rdf:type schema:PublicationIssue
87 Neee9928f580e4795b46bff1424df3d4a schema:name dimensions_id
88 schema:value pub.1034512637
89 rdf:type schema:PropertyValue
90 Nfb94c4a91de94102a4fe51b22ddaef18 rdf:first sg:person.012515412141.87
91 rdf:rest N38f36396271449d99b8a15847f95bc4e
92 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
93 schema:name Physical Sciences
94 rdf:type schema:DefinedTerm
95 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
96 schema:name Condensed Matter Physics
97 rdf:type schema:DefinedTerm
98 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
99 schema:name Quantum Physics
100 rdf:type schema:DefinedTerm
101 sg:journal.1136692 schema:issn 1063-7826
102 1090-6479
103 schema:name Semiconductors
104 schema:publisher Pleiades Publishing
105 rdf:type schema:Periodical
106 sg:person.011127073267.25 schema:affiliation grid-institutes:grid.423485.c
107 schema:familyName Yusupova
108 schema:givenName Sh. A.
109 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011127073267.25
110 rdf:type schema:Person
111 sg:person.011531160044.65 schema:affiliation grid-institutes:grid.423485.c
112 schema:familyName Shmidt
113 schema:givenName N. M.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011531160044.65
115 rdf:type schema:Person
116 sg:person.012515412141.87 schema:affiliation grid-institutes:grid.49100.3c
117 schema:familyName Argunova
118 schema:givenName T. S.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012515412141.87
120 rdf:type schema:Person
121 sg:person.014314546743.28 schema:affiliation grid-institutes:grid.423485.c
122 schema:familyName Kostina
123 schema:givenName L. S.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014314546743.28
125 rdf:type schema:Person
126 sg:person.014455135555.40 schema:affiliation grid-institutes:grid.423485.c
127 schema:familyName Belyakova
128 schema:givenName E. I.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014455135555.40
130 rdf:type schema:Person
131 sg:person.016601261017.57 schema:affiliation grid-institutes:grid.423485.c
132 schema:familyName Grekhov
133 schema:givenName I. V.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016601261017.57
135 rdf:type schema:Person
136 sg:person.0760167125.40 schema:affiliation grid-institutes:grid.49100.3c
137 schema:familyName Je
138 schema:givenName J. H.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0760167125.40
140 rdf:type schema:Person
141 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia
142 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia
143 rdf:type schema:Organization
144 grid-institutes:grid.49100.3c schema:alternateName Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea
145 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, 194021, St. Petersburg, Russia
146 Pohang University of Science and Technology, 790-784, Pohang, Republic of Korea
147 rdf:type schema:Organization
 




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