InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-08-18

AUTHORS

V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser, N. D. Zakharov, P. Werner, U. Gösele, Yu. B. Samsonenko, G. E. Cirlin

ABSTRACT

Methods of optical spectroscopy and electron microscopy have been used to study tunnel-injection nanostructures the active region of which consisted of an upper In0.15Ga0.85 As quantum-well layer and a lower layer of In0.6Ga0.4As quantum dots as a light emitter; both layers were separated by a GaAs barrier layer. Deviations from the semiclassical Wentzel-Kramers-Brillouin model are observed in the dependence of the tunneling time on barrier’s thickness. Reduction of the transfer time to several picoseconds at a barrier thickness smaller than 6 nm is accounted for by formation of InGaAs nanobridges between tops of quantum dots and the quantum-well layer; the nanobridges include those with their own hole state. The effect of an electric field induced by tunneling on the carriers’ transfer time in a tunnel-injection nanostructure is taken into account. More... »

PAGES

1050-1058

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610080178

DOI

http://dx.doi.org/10.1134/s1063782610080178

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003366492


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0205", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Optical Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "ZIK SiLi-nano, Martin-Luther-Universit\u00e4t, 06120, Halle, Germany", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia", 
            "ZIK SiLi-nano, Martin-Luther-Universit\u00e4t, 06120, Halle, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Talalaev", 
        "givenName": "V. G.", 
        "id": "sg:person.0615207126.40", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0615207126.40"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Senichev", 
        "givenName": "A. V.", 
        "id": "sg:person.013546221107.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013546221107.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Novikov", 
        "givenName": "B. V.", 
        "id": "sg:person.014034276053.56", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014034276053.56"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Max-Born-Institut f\u00fcr Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.419569.6", 
          "name": [
            "Max-Born-Institut f\u00fcr Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tomm", 
        "givenName": "J. W.", 
        "id": "sg:person.013312125473.62", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013312125473.62"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Max-Born-Institut f\u00fcr Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.419569.6", 
          "name": [
            "Max-Born-Institut f\u00fcr Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Elsaesser", 
        "givenName": "T.", 
        "id": "sg:person.014321602355.57", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014321602355.57"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Max-Planck-Institut f\u00fcr Mikrostrukturphysik, 06120, Halle, Germany", 
          "id": "http://www.grid.ac/institutes/grid.450270.4", 
          "name": [
            "Max-Planck-Institut f\u00fcr Mikrostrukturphysik, 06120, Halle, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zakharov", 
        "givenName": "N. D.", 
        "id": "sg:person.010544170161.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010544170161.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Max-Planck-Institut f\u00fcr Mikrostrukturphysik, 06120, Halle, Germany", 
          "id": "http://www.grid.ac/institutes/grid.450270.4", 
          "name": [
            "Max-Planck-Institut f\u00fcr Mikrostrukturphysik, 06120, Halle, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Werner", 
        "givenName": "P.", 
        "id": "sg:person.0703230070.47", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0703230070.47"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Max-Planck-Institut f\u00fcr Mikrostrukturphysik, 06120, Halle, Germany", 
          "id": "http://www.grid.ac/institutes/grid.450270.4", 
          "name": [
            "Max-Planck-Institut f\u00fcr Mikrostrukturphysik, 06120, Halle, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "G\u00f6sele", 
        "givenName": "U.", 
        "id": "sg:person.01135264674.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01135264674.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia", 
            "St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonenko", 
        "givenName": "Yu. B.", 
        "id": "sg:person.016561315174.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016561315174.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia", 
            "St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cirlin", 
        "givenName": "G. E.", 
        "id": "sg:person.014222264064.92", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014222264064.92"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2010-08-18", 
    "datePublishedReg": "2010-08-18", 
    "description": "Methods of optical spectroscopy and electron microscopy have been used to study tunnel-injection nanostructures the active region of which consisted of an upper In0.15Ga0.85 As quantum-well layer and a lower layer of In0.6Ga0.4As quantum dots as a light emitter; both layers were separated by a GaAs barrier layer. Deviations from the semiclassical Wentzel-Kramers-Brillouin model are observed in the dependence of the tunneling time on barrier\u2019s thickness. Reduction of the transfer time to several picoseconds at a barrier thickness smaller than 6 nm is accounted for by formation of InGaAs nanobridges between tops of quantum dots and the quantum-well layer; the nanobridges include those with their own hole state. The effect of an electric field induced by tunneling on the carriers\u2019 transfer time in a tunnel-injection nanostructure is taken into account.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782610080178", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "quantum-well layers", 
      "quantum dots", 
      "barrier thickness", 
      "semiclassical Wentzel-Kramers", 
      "GaAs barrier layers", 
      "Wentzel-Kramers", 
      "optical spectroscopy", 
      "tunneling time", 
      "Brillouin model", 
      "hole states", 
      "light emitters", 
      "excitation transfer", 
      "electric field", 
      "active region", 
      "luminescence kinetics", 
      "barrier layer", 
      "nanobridges", 
      "electron microscopy", 
      "dots", 
      "transfer time", 
      "lower layer", 
      "layer", 
      "picoseconds", 
      "thickness", 
      "nanostructures", 
      "emitters", 
      "spectroscopy", 
      "microscopy", 
      "field", 
      "dependence", 
      "state", 
      "carriers", 
      "transfer", 
      "structure", 
      "top", 
      "formation", 
      "time", 
      "region", 
      "kinetics", 
      "deviation", 
      "account", 
      "method", 
      "model", 
      "reduction", 
      "effect", 
      "InGaAs nanobridges", 
      "own hole state", 
      "tunnel-injection nanostructure", 
      "InGaAs tunnel-injection structures", 
      "tunnel-injection structures"
    ], 
    "name": "InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics", 
    "pagination": "1050-1058", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1003366492"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782610080178"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782610080178", 
      "https://app.dimensions.ai/details/publication/pub.1003366492"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:23", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_518.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782610080178"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782610080178'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782610080178'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782610080178'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782610080178'


 

This table displays all metadata directly associated to this object as RDF triples.

186 TRIPLES      21 PREDICATES      75 URIs      67 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782610080178 schema:about anzsrc-for:02
2 anzsrc-for:0205
3 schema:author N0688a3e6a6dc47a3ab3140d5b0e677cd
4 schema:datePublished 2010-08-18
5 schema:datePublishedReg 2010-08-18
6 schema:description Methods of optical spectroscopy and electron microscopy have been used to study tunnel-injection nanostructures the active region of which consisted of an upper In0.15Ga0.85 As quantum-well layer and a lower layer of In0.6Ga0.4As quantum dots as a light emitter; both layers were separated by a GaAs barrier layer. Deviations from the semiclassical Wentzel-Kramers-Brillouin model are observed in the dependence of the tunneling time on barrier’s thickness. Reduction of the transfer time to several picoseconds at a barrier thickness smaller than 6 nm is accounted for by formation of InGaAs nanobridges between tops of quantum dots and the quantum-well layer; the nanobridges include those with their own hole state. The effect of an electric field induced by tunneling on the carriers’ transfer time in a tunnel-injection nanostructure is taken into account.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N4cef19baa32349fdbc59a1cc23e58a2d
11 N6c10b479a84643d59751787f9d55a75d
12 sg:journal.1136692
13 schema:keywords Brillouin model
14 GaAs barrier layers
15 InGaAs nanobridges
16 InGaAs tunnel-injection structures
17 Wentzel-Kramers
18 account
19 active region
20 barrier layer
21 barrier thickness
22 carriers
23 dependence
24 deviation
25 dots
26 effect
27 electric field
28 electron microscopy
29 emitters
30 excitation transfer
31 field
32 formation
33 hole states
34 kinetics
35 layer
36 light emitters
37 lower layer
38 luminescence kinetics
39 method
40 microscopy
41 model
42 nanobridges
43 nanostructures
44 optical spectroscopy
45 own hole state
46 picoseconds
47 quantum dots
48 quantum-well layers
49 reduction
50 region
51 semiclassical Wentzel-Kramers
52 spectroscopy
53 state
54 structure
55 thickness
56 time
57 top
58 transfer
59 transfer time
60 tunnel-injection nanostructure
61 tunnel-injection structures
62 tunneling time
63 schema:name InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
64 schema:pagination 1050-1058
65 schema:productId N2c1961f6de4b4edb8320a94940e93e66
66 Na321e960e9e8433ab44dffb34aa42299
67 schema:sameAs https://app.dimensions.ai/details/publication/pub.1003366492
68 https://doi.org/10.1134/s1063782610080178
69 schema:sdDatePublished 2021-12-01T19:23
70 schema:sdLicense https://scigraph.springernature.com/explorer/license/
71 schema:sdPublisher Ne627b653d3b54cee932f9b66da650a37
72 schema:url https://doi.org/10.1134/s1063782610080178
73 sgo:license sg:explorer/license/
74 sgo:sdDataset articles
75 rdf:type schema:ScholarlyArticle
76 N0688a3e6a6dc47a3ab3140d5b0e677cd rdf:first sg:person.0615207126.40
77 rdf:rest N8ba6f8c3bdc54b8a9dc25bc0a747d372
78 N1944136413984a7b8124564b78cccfbb rdf:first sg:person.0703230070.47
79 rdf:rest N36240d09397f4b21b592f28d56683edc
80 N198f1dbcdbd84125a8daa81cbf2ed35f rdf:first sg:person.014321602355.57
81 rdf:rest N56b561fbb4d84ea9b41f94ac872ccd97
82 N2c1961f6de4b4edb8320a94940e93e66 schema:name doi
83 schema:value 10.1134/s1063782610080178
84 rdf:type schema:PropertyValue
85 N33e75b56ec9e4ea193bbe94e19fcc132 rdf:first sg:person.013312125473.62
86 rdf:rest N198f1dbcdbd84125a8daa81cbf2ed35f
87 N36240d09397f4b21b592f28d56683edc rdf:first sg:person.01135264674.11
88 rdf:rest Naf101658f2c3498abd05ac41a0a4abcc
89 N4cef19baa32349fdbc59a1cc23e58a2d schema:volumeNumber 44
90 rdf:type schema:PublicationVolume
91 N56b561fbb4d84ea9b41f94ac872ccd97 rdf:first sg:person.010544170161.07
92 rdf:rest N1944136413984a7b8124564b78cccfbb
93 N6c10b479a84643d59751787f9d55a75d schema:issueNumber 8
94 rdf:type schema:PublicationIssue
95 N8738bcf99cd141238d7a1bd074e4825a rdf:first sg:person.014034276053.56
96 rdf:rest N33e75b56ec9e4ea193bbe94e19fcc132
97 N8ba6f8c3bdc54b8a9dc25bc0a747d372 rdf:first sg:person.013546221107.05
98 rdf:rest N8738bcf99cd141238d7a1bd074e4825a
99 Na321e960e9e8433ab44dffb34aa42299 schema:name dimensions_id
100 schema:value pub.1003366492
101 rdf:type schema:PropertyValue
102 Naf101658f2c3498abd05ac41a0a4abcc rdf:first sg:person.016561315174.96
103 rdf:rest Nbd10f8dbe90f44d69d1e788344f76853
104 Nbd10f8dbe90f44d69d1e788344f76853 rdf:first sg:person.014222264064.92
105 rdf:rest rdf:nil
106 Ne627b653d3b54cee932f9b66da650a37 schema:name Springer Nature - SN SciGraph project
107 rdf:type schema:Organization
108 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
109 schema:name Physical Sciences
110 rdf:type schema:DefinedTerm
111 anzsrc-for:0205 schema:inDefinedTermSet anzsrc-for:
112 schema:name Optical Physics
113 rdf:type schema:DefinedTerm
114 sg:journal.1136692 schema:issn 1063-7826
115 1090-6479
116 schema:name Semiconductors
117 schema:publisher Pleiades Publishing
118 rdf:type schema:Periodical
119 sg:person.010544170161.07 schema:affiliation grid-institutes:grid.450270.4
120 schema:familyName Zakharov
121 schema:givenName N. D.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010544170161.07
123 rdf:type schema:Person
124 sg:person.01135264674.11 schema:affiliation grid-institutes:grid.450270.4
125 schema:familyName Gösele
126 schema:givenName U.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01135264674.11
128 rdf:type schema:Person
129 sg:person.013312125473.62 schema:affiliation grid-institutes:grid.419569.6
130 schema:familyName Tomm
131 schema:givenName J. W.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013312125473.62
133 rdf:type schema:Person
134 sg:person.013546221107.05 schema:affiliation grid-institutes:grid.15447.33
135 schema:familyName Senichev
136 schema:givenName A. V.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013546221107.05
138 rdf:type schema:Person
139 sg:person.014034276053.56 schema:affiliation grid-institutes:grid.15447.33
140 schema:familyName Novikov
141 schema:givenName B. V.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014034276053.56
143 rdf:type schema:Person
144 sg:person.014222264064.92 schema:affiliation grid-institutes:grid.4886.2
145 schema:familyName Cirlin
146 schema:givenName G. E.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014222264064.92
148 rdf:type schema:Person
149 sg:person.014321602355.57 schema:affiliation grid-institutes:grid.419569.6
150 schema:familyName Elsaesser
151 schema:givenName T.
152 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014321602355.57
153 rdf:type schema:Person
154 sg:person.016561315174.96 schema:affiliation grid-institutes:grid.4886.2
155 schema:familyName Samsonenko
156 schema:givenName Yu. B.
157 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016561315174.96
158 rdf:type schema:Person
159 sg:person.0615207126.40 schema:affiliation grid-institutes:None
160 schema:familyName Talalaev
161 schema:givenName V. G.
162 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0615207126.40
163 rdf:type schema:Person
164 sg:person.0703230070.47 schema:affiliation grid-institutes:grid.450270.4
165 schema:familyName Werner
166 schema:givenName P.
167 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0703230070.47
168 rdf:type schema:Person
169 grid-institutes:None schema:alternateName ZIK SiLi-nano, Martin-Luther-Universität, 06120, Halle, Germany
170 schema:name Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia
171 ZIK SiLi-nano, Martin-Luther-Universität, 06120, Halle, Germany
172 rdf:type schema:Organization
173 grid-institutes:grid.15447.33 schema:alternateName Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia
174 schema:name Fock Institute of Physics, St. Petersburg State University, 198504, Petrodvorets, Russia
175 rdf:type schema:Organization
176 grid-institutes:grid.419569.6 schema:alternateName Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany
177 schema:name Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489, Berlin, Germany
178 rdf:type schema:Organization
179 grid-institutes:grid.450270.4 schema:alternateName Max-Planck-Institut für Mikrostrukturphysik, 06120, Halle, Germany
180 schema:name Max-Planck-Institut für Mikrostrukturphysik, 06120, Halle, Germany
181 rdf:type schema:Organization
182 grid-institutes:grid.4886.2 schema:alternateName St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia
183 schema:name Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia
184 Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
185 St. Petersburg Physical Technological Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia
186 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...