Structural and optical properties of InAlN/GaN distributed Bragg reflectors View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-07-22

AUTHORS

S. O. Usov, E. E. Zavarin, A. F. Tsatsul’nikov, V. V. Lundin, A. V. Sakharov, A. E. Nikolaev, M. A. Sinitsyn, N. V. Kryzhanovskaya, S. I. Troshkov, N. N. Ledentsov

ABSTRACT

Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460–610 nm. More... »

PAGES

949-953

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610070201

DOI

http://dx.doi.org/10.1134/s1063782610070201

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1016453723


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Usov", 
        "givenName": "S. O.", 
        "id": "sg:person.011162335741.78", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011162335741.78"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsul\u2019nikov", 
        "givenName": "A. F.", 
        "id": "sg:person.012131633577.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. V.", 
        "id": "sg:person.013427374503.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.502986.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikolaev", 
        "givenName": "A. E.", 
        "id": "sg:person.07464610023.44", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07464610023.44"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Physics and Technology Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "St. Petersburg Physics and Technology Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sinitsyn", 
        "givenName": "M. A.", 
        "id": "sg:person.014606113257.46", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014606113257.46"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kryzhanovskaya", 
        "givenName": "N. V.", 
        "id": "sg:person.013437660456.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013437660456.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Troshkov", 
        "givenName": "S. I.", 
        "id": "sg:person.01126063542.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N. N.", 
        "id": "sg:person.014140400702.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2010-07-22", 
    "datePublishedReg": "2010-07-22", 
    "description": "Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460\u2013610 nm.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782610070201", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "InAlN/GaN", 
      "Bragg reflectors", 
      "optical properties", 
      "epitaxial growth", 
      "sapphire substrates", 
      "InAlN layers", 
      "GaN", 
      "reflector", 
      "structural properties", 
      "properties", 
      "wavelength range", 
      "reflection maximum", 
      "MOCVD", 
      "thickness", 
      "layer", 
      "reflectance", 
      "substrate", 
      "conditions", 
      "optimization", 
      "growth conditions", 
      "influence", 
      "range", 
      "maximum", 
      "growth"
    ], 
    "name": "Structural and optical properties of InAlN/GaN distributed Bragg reflectors", 
    "pagination": "949-953", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1016453723"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782610070201"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782610070201", 
      "https://app.dimensions.ai/details/publication/pub.1016453723"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:15", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_515.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782610070201"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782610070201'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782610070201'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782610070201'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782610070201'


 

This table displays all metadata directly associated to this object as RDF triples.

157 TRIPLES      21 PREDICATES      50 URIs      41 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782610070201 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nbc9e058aab4640848490ae1e17d3b4b1
5 schema:datePublished 2010-07-22
6 schema:datePublishedReg 2010-07-22
7 schema:description Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460–610 nm.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N560d50587d584c19906894fa22f2b922
12 Nea6fb92f745d45028b3c0145b6b5a23b
13 sg:journal.1136692
14 schema:keywords Bragg reflectors
15 GaN
16 InAlN layers
17 InAlN/GaN
18 MOCVD
19 conditions
20 epitaxial growth
21 growth
22 growth conditions
23 influence
24 layer
25 maximum
26 optical properties
27 optimization
28 properties
29 range
30 reflectance
31 reflection maximum
32 reflector
33 sapphire substrates
34 structural properties
35 substrate
36 thickness
37 wavelength range
38 schema:name Structural and optical properties of InAlN/GaN distributed Bragg reflectors
39 schema:pagination 949-953
40 schema:productId N032474d51d824a418d8a26cbec9d4c3e
41 Ne98142659741477098319f60050b13ec
42 schema:sameAs https://app.dimensions.ai/details/publication/pub.1016453723
43 https://doi.org/10.1134/s1063782610070201
44 schema:sdDatePublished 2021-11-01T18:15
45 schema:sdLicense https://scigraph.springernature.com/explorer/license/
46 schema:sdPublisher N1c6f9e2a1da440179a82ce2b58ad92ba
47 schema:url https://doi.org/10.1134/s1063782610070201
48 sgo:license sg:explorer/license/
49 sgo:sdDataset articles
50 rdf:type schema:ScholarlyArticle
51 N032474d51d824a418d8a26cbec9d4c3e schema:name dimensions_id
52 schema:value pub.1016453723
53 rdf:type schema:PropertyValue
54 N09bfbd6b5db04e5e95dfc00b756cdb9e rdf:first sg:person.014140400702.37
55 rdf:rest rdf:nil
56 N1c6f9e2a1da440179a82ce2b58ad92ba schema:name Springer Nature - SN SciGraph project
57 rdf:type schema:Organization
58 N293acc02a3d946bf9f67b3fddb27a230 rdf:first sg:person.01126063542.10
59 rdf:rest N09bfbd6b5db04e5e95dfc00b756cdb9e
60 N2d3c5a33230a41abaf19b32cb1de1c7d rdf:first sg:person.015451372144.61
61 rdf:rest Nf5d69c4341db45f6b804f2592cc340e4
62 N560d50587d584c19906894fa22f2b922 schema:volumeNumber 44
63 rdf:type schema:PublicationVolume
64 N8a53e7dc9cd349ba8a3f461016c4ed26 rdf:first sg:person.013437660456.61
65 rdf:rest N293acc02a3d946bf9f67b3fddb27a230
66 N8f1ea9c6723248bfa8edbece38eb6e7c rdf:first sg:person.014606113257.46
67 rdf:rest N8a53e7dc9cd349ba8a3f461016c4ed26
68 N9edfe6da9e734160b5fdc230c90a38c4 rdf:first sg:person.010201114167.20
69 rdf:rest Nc46367ba673b41f2acba6b2da11754d8
70 Nb5d507083af94baca38635bb99df2e47 rdf:first sg:person.013427374503.16
71 rdf:rest N9edfe6da9e734160b5fdc230c90a38c4
72 Nbc9e058aab4640848490ae1e17d3b4b1 rdf:first sg:person.011162335741.78
73 rdf:rest N2d3c5a33230a41abaf19b32cb1de1c7d
74 Nc46367ba673b41f2acba6b2da11754d8 rdf:first sg:person.07464610023.44
75 rdf:rest N8f1ea9c6723248bfa8edbece38eb6e7c
76 Ne98142659741477098319f60050b13ec schema:name doi
77 schema:value 10.1134/s1063782610070201
78 rdf:type schema:PropertyValue
79 Nea6fb92f745d45028b3c0145b6b5a23b schema:issueNumber 7
80 rdf:type schema:PublicationIssue
81 Nf5d69c4341db45f6b804f2592cc340e4 rdf:first sg:person.012131633577.53
82 rdf:rest Nb5d507083af94baca38635bb99df2e47
83 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
84 schema:name Physical Sciences
85 rdf:type schema:DefinedTerm
86 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
87 schema:name Condensed Matter Physics
88 rdf:type schema:DefinedTerm
89 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
90 schema:name Quantum Physics
91 rdf:type schema:DefinedTerm
92 sg:journal.1136692 schema:issn 1063-7826
93 1090-6479
94 schema:name Semiconductors
95 schema:publisher Pleiades Publishing
96 rdf:type schema:Periodical
97 sg:person.010201114167.20 schema:affiliation grid-institutes:grid.502986.0
98 schema:familyName Sakharov
99 schema:givenName A. V.
100 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
101 rdf:type schema:Person
102 sg:person.011162335741.78 schema:affiliation grid-institutes:grid.502986.0
103 schema:familyName Usov
104 schema:givenName S. O.
105 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011162335741.78
106 rdf:type schema:Person
107 sg:person.01126063542.10 schema:affiliation grid-institutes:grid.423485.c
108 schema:familyName Troshkov
109 schema:givenName S. I.
110 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01126063542.10
111 rdf:type schema:Person
112 sg:person.012131633577.53 schema:affiliation grid-institutes:grid.502986.0
113 schema:familyName Tsatsul’nikov
114 schema:givenName A. F.
115 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53
116 rdf:type schema:Person
117 sg:person.013427374503.16 schema:affiliation grid-institutes:grid.502986.0
118 schema:familyName Lundin
119 schema:givenName V. V.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16
121 rdf:type schema:Person
122 sg:person.013437660456.61 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Kryzhanovskaya
124 schema:givenName N. V.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013437660456.61
126 rdf:type schema:Person
127 sg:person.014140400702.37 schema:affiliation grid-institutes:grid.423485.c
128 schema:familyName Ledentsov
129 schema:givenName N. N.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37
131 rdf:type schema:Person
132 sg:person.014606113257.46 schema:affiliation grid-institutes:grid.4886.2
133 schema:familyName Sinitsyn
134 schema:givenName M. A.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014606113257.46
136 rdf:type schema:Person
137 sg:person.015451372144.61 schema:affiliation grid-institutes:grid.502986.0
138 schema:familyName Zavarin
139 schema:givenName E. E.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
141 rdf:type schema:Person
142 sg:person.07464610023.44 schema:affiliation grid-institutes:grid.502986.0
143 schema:familyName Nikolaev
144 schema:givenName A. E.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07464610023.44
146 rdf:type schema:Person
147 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
148 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
149 rdf:type schema:Organization
150 grid-institutes:grid.4886.2 schema:alternateName St. Petersburg Physics and Technology Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia
151 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
152 St. Petersburg Physics and Technology Center for Research and Education, Russian Academy of Sciences, 195220, St. Petersburg, Russia
153 rdf:type schema:Organization
154 grid-institutes:grid.502986.0 schema:alternateName Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
155 schema:name Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
156 Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
157 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...