The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-07-22

AUTHORS

V. S. Sizov, A. F. Tsatsulnikov, A. V. Sakharov, W. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hÿtch, A. E. Nikolaev, A. M. Mintairov, Yan He, J. L. Merz

ABSTRACT

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1–3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes. More... »

PAGES

924-930

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261007016x

DOI

http://dx.doi.org/10.1134/s106378261007016x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1029278306


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0205", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Optical Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sizov", 
        "givenName": "V. S.", 
        "id": "sg:person.014637527201.21", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014637527201.21"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsulnikov", 
        "givenName": "A. F.", 
        "id": "sg:person.015475065541.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.016272446141.43", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016272446141.43"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "W. V.", 
        "id": "sg:person.013543521751.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), 31055, Toulouse, France", 
          "id": "http://www.grid.ac/institutes/grid.4444.0", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), 31055, Toulouse, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cherkashin", 
        "givenName": "N. A.", 
        "id": "sg:person.01236734145.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), 31055, Toulouse, France", 
          "id": "http://www.grid.ac/institutes/grid.4444.0", 
          "name": [
            "Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), 31055, Toulouse, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "H\u00fftch", 
        "givenName": "M. J.", 
        "id": "sg:person.01016272640.39", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01016272640.39"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia", 
            "Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikolaev", 
        "givenName": "A. E.", 
        "id": "sg:person.010050311505.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA", 
          "id": "http://www.grid.ac/institutes/grid.131063.6", 
          "name": [
            "EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mintairov", 
        "givenName": "A. M.", 
        "id": "sg:person.0762075347.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0762075347.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA", 
          "id": "http://www.grid.ac/institutes/grid.131063.6", 
          "name": [
            "EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "He", 
        "givenName": "Yan", 
        "id": "sg:person.014367675603.27", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014367675603.27"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA", 
          "id": "http://www.grid.ac/institutes/grid.131063.6", 
          "name": [
            "EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Merz", 
        "givenName": "J. L.", 
        "id": "sg:person.01112603024.86", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01112603024.86"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2010-07-22", 
    "datePublishedReg": "2010-07-22", 
    "description": "Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1\u20133 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s106378261007016x", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "7", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "short-period InGaN/GaN superlattices", 
      "short-period superlattices", 
      "light-emitting diode structures", 
      "InGaN/GaN superlattices", 
      "light-emitting diodes", 
      "GaN superlattices", 
      "diode structure", 
      "injection of carriers", 
      "residual quantum", 
      "quantum efficiency", 
      "two-dimensional layers", 
      "quantum dots", 
      "AlGaN barrier", 
      "optical properties", 
      "active region", 
      "superlattices", 
      "nonradiative centers", 
      "diodes", 
      "effective height", 
      "quantum", 
      "dots", 
      "structure", 
      "array", 
      "layer", 
      "region", 
      "carriers", 
      "properties", 
      "point of view", 
      "barriers", 
      "efficiency", 
      "center", 
      "content 1", 
      "height", 
      "inclusion", 
      "increase", 
      "use", 
      "point", 
      "nonuniform arrays", 
      "view", 
      "concentration", 
      "injection", 
      "content", 
      "active InGaN region", 
      "InGaN region", 
      "blue-region light-emitting diodes"
    ], 
    "name": "The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes", 
    "pagination": "924-930", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1029278306"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s106378261007016x"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s106378261007016x", 
      "https://app.dimensions.ai/details/publication/pub.1029278306"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:15", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_520.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s106378261007016x"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

181 TRIPLES      21 PREDICATES      70 URIs      62 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s106378261007016x schema:about anzsrc-for:02
2 anzsrc-for:0205
3 schema:author N57b5c07f9cf54399b553eb8bcbb01cb0
4 schema:datePublished 2010-07-22
5 schema:datePublishedReg 2010-07-22
6 schema:description Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1–3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N87e57e5e064349bd9c2aa616dfd5dd47
11 Nec11bf522edf45fb877919f22bbbb61a
12 sg:journal.1136692
13 schema:keywords AlGaN barrier
14 GaN superlattices
15 InGaN region
16 InGaN/GaN superlattices
17 active InGaN region
18 active region
19 array
20 barriers
21 blue-region light-emitting diodes
22 carriers
23 center
24 concentration
25 content
26 content 1
27 diode structure
28 diodes
29 dots
30 effective height
31 efficiency
32 height
33 inclusion
34 increase
35 injection
36 injection of carriers
37 layer
38 light-emitting diode structures
39 light-emitting diodes
40 nonradiative centers
41 nonuniform arrays
42 optical properties
43 point
44 point of view
45 properties
46 quantum
47 quantum dots
48 quantum efficiency
49 region
50 residual quantum
51 short-period InGaN/GaN superlattices
52 short-period superlattices
53 structure
54 superlattices
55 two-dimensional layers
56 use
57 view
58 schema:name The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
59 schema:pagination 924-930
60 schema:productId N468260b79c004c22b7270261824cb45f
61 Na8747f894ef848af951744708c6939f2
62 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029278306
63 https://doi.org/10.1134/s106378261007016x
64 schema:sdDatePublished 2021-11-01T18:15
65 schema:sdLicense https://scigraph.springernature.com/explorer/license/
66 schema:sdPublisher N47ceabea4ff447f6a9440018f29ccb19
67 schema:url https://doi.org/10.1134/s106378261007016x
68 sgo:license sg:explorer/license/
69 sgo:sdDataset articles
70 rdf:type schema:ScholarlyArticle
71 N07bde6c282444be99233b00de9e6288d rdf:first sg:person.01236734145.04
72 rdf:rest N78214a74f2194c37a8dec0e3b3936b1b
73 N0f01863496ba40d897ccb14219e5af25 rdf:first sg:person.01112603024.86
74 rdf:rest rdf:nil
75 N13818b8651534bdb9390e51437cb452a rdf:first sg:person.015475065541.13
76 rdf:rest N73f974e1d42a45b0a34fb06aeff5ac4b
77 N468260b79c004c22b7270261824cb45f schema:name doi
78 schema:value 10.1134/s106378261007016x
79 rdf:type schema:PropertyValue
80 N47ceabea4ff447f6a9440018f29ccb19 schema:name Springer Nature - SN SciGraph project
81 rdf:type schema:Organization
82 N56ff5b8a31054b91b107a14936aed784 rdf:first sg:person.0762075347.53
83 rdf:rest Nddd4daa817b849cb9acb89251a79017b
84 N57b5c07f9cf54399b553eb8bcbb01cb0 rdf:first sg:person.014637527201.21
85 rdf:rest N13818b8651534bdb9390e51437cb452a
86 N58bd61cedeb34cff9fa36158dd01cff3 rdf:first sg:person.015451372144.61
87 rdf:rest N07bde6c282444be99233b00de9e6288d
88 N73f974e1d42a45b0a34fb06aeff5ac4b rdf:first sg:person.016272446141.43
89 rdf:rest Nf2104d7c53bd427284ffa5161c5c86c4
90 N78214a74f2194c37a8dec0e3b3936b1b rdf:first sg:person.01016272640.39
91 rdf:rest Nced1eae36aee450dbab5420dca64890d
92 N87e57e5e064349bd9c2aa616dfd5dd47 schema:issueNumber 7
93 rdf:type schema:PublicationIssue
94 Na8747f894ef848af951744708c6939f2 schema:name dimensions_id
95 schema:value pub.1029278306
96 rdf:type schema:PropertyValue
97 Nced1eae36aee450dbab5420dca64890d rdf:first sg:person.010050311505.33
98 rdf:rest N56ff5b8a31054b91b107a14936aed784
99 Nddd4daa817b849cb9acb89251a79017b rdf:first sg:person.014367675603.27
100 rdf:rest N0f01863496ba40d897ccb14219e5af25
101 Nec11bf522edf45fb877919f22bbbb61a schema:volumeNumber 44
102 rdf:type schema:PublicationVolume
103 Nf2104d7c53bd427284ffa5161c5c86c4 rdf:first sg:person.013543521751.29
104 rdf:rest N58bd61cedeb34cff9fa36158dd01cff3
105 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
106 schema:name Physical Sciences
107 rdf:type schema:DefinedTerm
108 anzsrc-for:0205 schema:inDefinedTermSet anzsrc-for:
109 schema:name Optical Physics
110 rdf:type schema:DefinedTerm
111 sg:journal.1136692 schema:issn 1063-7826
112 1090-6479
113 schema:name Semiconductors
114 schema:publisher Pleiades Publishing
115 rdf:type schema:Periodical
116 sg:person.010050311505.33 schema:affiliation grid-institutes:grid.423485.c
117 schema:familyName Nikolaev
118 schema:givenName A. E.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33
120 rdf:type schema:Person
121 sg:person.01016272640.39 schema:affiliation grid-institutes:grid.4444.0
122 schema:familyName Hÿtch
123 schema:givenName M. J.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01016272640.39
125 rdf:type schema:Person
126 sg:person.01112603024.86 schema:affiliation grid-institutes:grid.131063.6
127 schema:familyName Merz
128 schema:givenName J. L.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01112603024.86
130 rdf:type schema:Person
131 sg:person.01236734145.04 schema:affiliation grid-institutes:grid.4444.0
132 schema:familyName Cherkashin
133 schema:givenName N. A.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04
135 rdf:type schema:Person
136 sg:person.013543521751.29 schema:affiliation grid-institutes:grid.423485.c
137 schema:familyName Lundin
138 schema:givenName W. V.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29
140 rdf:type schema:Person
141 sg:person.014367675603.27 schema:affiliation grid-institutes:grid.131063.6
142 schema:familyName He
143 schema:givenName Yan
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014367675603.27
145 rdf:type schema:Person
146 sg:person.014637527201.21 schema:affiliation grid-institutes:grid.423485.c
147 schema:familyName Sizov
148 schema:givenName V. S.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014637527201.21
150 rdf:type schema:Person
151 sg:person.015451372144.61 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Zavarin
153 schema:givenName E. E.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
155 rdf:type schema:Person
156 sg:person.015475065541.13 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Tsatsulnikov
158 schema:givenName A. F.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13
160 rdf:type schema:Person
161 sg:person.016272446141.43 schema:affiliation grid-institutes:grid.423485.c
162 schema:familyName Sakharov
163 schema:givenName A. V.
164 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016272446141.43
165 rdf:type schema:Person
166 sg:person.0762075347.53 schema:affiliation grid-institutes:grid.131063.6
167 schema:familyName Mintairov
168 schema:givenName A. M.
169 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0762075347.53
170 rdf:type schema:Person
171 grid-institutes:grid.131063.6 schema:alternateName EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA
172 schema:name EE Department, University of Notre Dame, 46556, Notre Dame, IN, USA
173 rdf:type schema:Organization
174 grid-institutes:grid.423485.c schema:alternateName Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
175 schema:name Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
176 Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
177 rdf:type schema:Organization
178 grid-institutes:grid.4444.0 schema:alternateName Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), 31055, Toulouse, France
179 schema:name Center for Material Elaboration and Structural Studies (CEMES), National Center for Scientific Research (CNRS), 31055, Toulouse, France
180 Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, 194021, St. Petersburg, Russia
181 rdf:type schema:Organization
 




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