Bistable low temperature (77 K) impurity breakdown in p-type 4H-SiC View Full Text


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Article Info

DATE

2010-07-22

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

Low-temperature (77 K) forward current-voltage characteristics of 4H-SiC p+-p-n+-n (substrate) mesa epitaxial diode structures have been measured. The characteristics are S-shaped, which is accounted for by the bistable nature of the impact ionization of frozen-out acceptor atoms of aluminum.

PAGES

872-874

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610070079

DOI

http://dx.doi.org/10.1134/s1063782610070079

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000015504


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