Ontology type: schema:ScholarlyArticle
2010-07-22
AUTHORSP. A. Ivanov, A. S. Potapov, T. P. Samsonova
ABSTRACTLow-temperature (77 K) forward current-voltage characteristics of 4H-SiC p+-p-n+-n (substrate) mesa epitaxial diode structures have been measured. The characteristics are S-shaped, which is accounted for by the bistable nature of the impact ionization of frozen-out acceptor atoms of aluminum.
PAGES872-874
http://scigraph.springernature.com/pub.10.1134/s1063782610070079
DOIhttp://dx.doi.org/10.1134/s1063782610070079
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