Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-06

AUTHORS

N. V. Kryzhanovskaya, W. V. Lundin, A. E. Nikolaev, A. F. Tsatsul’nikov, A. V. Sakharov, M. M. Pavlov, N. A. Cherkachin, M. J. Hÿtch, G. A. Valkovsky, M. A. Yagovkina, S. O. Usov

ABSTRACT

The results of the study of structural and optical properties of short-period InGaN/GaN superlattices synthesized by MOCVD on sapphire substrates are presented. To form the superlattices, the method of periodic interruption of the growth of the InGaN layer with hydrogen supply into the reactor was used. It is shown that, with the use of the suggested method, an InGaN/GaN periodic structure with the developed interfaces and regions of joining the neighboring InGaN layers not correlated in a vertical direction is formed. The formation of such regions leads to a heavy dependence of the shape of the emission spectra of the super-lattices on the number of periods in the range of 400–470 nm. More... »

PAGES

828-834

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610060242

DOI

http://dx.doi.org/10.1134/s1063782610060242

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044634509


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