A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices View Full Text


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Article Info

DATE

2010-06-27

AUTHORS

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, M. A. Synitsin, V. S. Sizov, A. L. Zakgeim, M. N. Mizerov

ABSTRACT

A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region. More... »

PAGES

808-811

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610060205

DOI

http://dx.doi.org/10.1134/s1063782610060205

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044133279


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164 schema:name Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
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