Mechanism of the GaN LED efficiency falloff with increasing current View Full Text


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Article Info

DATE

2010-06-27

AUTHORS

N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, Y. G. Shreter

ABSTRACT

The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers. More... »

PAGES

794-800

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610060175

DOI

http://dx.doi.org/10.1134/s1063782610060175

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028089909


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