Mechanism of the GaN LED efficiency falloff with increasing current View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-06-27

AUTHORS

N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, Y. G. Shreter

ABSTRACT

The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers. More... »

PAGES

794-800

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610060175

DOI

http://dx.doi.org/10.1134/s1063782610060175

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028089909


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bochkareva", 
        "givenName": "N. I.", 
        "id": "sg:person.013443662013.38", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013443662013.38"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Voronenkov", 
        "givenName": "V. V.", 
        "id": "sg:person.07660377413.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660377413.12"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gorbunov", 
        "givenName": "R. I.", 
        "id": "sg:person.016363450613.62", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016363450613.62"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zubrilov", 
        "givenName": "A. S.", 
        "id": "sg:person.012050721013.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012050721013.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lelikov", 
        "givenName": "Y. S.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Fock Institute of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Fock Institute of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Latyshev", 
        "givenName": "F. E.", 
        "id": "sg:person.012017220123.85", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012017220123.85"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rebane", 
        "givenName": "Y. T.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsyuk", 
        "givenName": "A. I.", 
        "id": "sg:person.015566070213.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015566070213.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shreter", 
        "givenName": "Y. G.", 
        "id": "sg:person.014337477245.01", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014337477245.01"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-3-662-03462-0", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042465908", 
          "https://doi.org/10.1007/978-3-662-03462-0"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-3-642-58562-3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009822908", 
          "https://doi.org/10.1007/978-3-642-58562-3"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2010-06-27", 
    "datePublishedReg": "2010-06-27", 
    "description": "The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782610060175", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "44"
      }
    ], 
    "keywords": [
      "defect-related energy levels", 
      "GaN LED structures", 
      "InGaN active layer", 
      "quasi-Fermi level", 
      "band-tail states", 
      "quantum efficiency", 
      "carrier leakage", 
      "energy gap", 
      "LED structure", 
      "energy levels", 
      "tunnel transitions", 
      "mobility edge", 
      "current density", 
      "barrier layer", 
      "active layer", 
      "falloff", 
      "tunnel component", 
      "quantum", 
      "density", 
      "layer", 
      "LEDs", 
      "transition", 
      "current", 
      "edge", 
      "state", 
      "gap", 
      "temperature", 
      "structure", 
      "efficiency", 
      "components", 
      "leakage", 
      "mechanism", 
      "results", 
      "biases", 
      "levels", 
      "efficiency falloff", 
      "internal quantum efficiency falloff", 
      "quantum efficiency falloff", 
      "local defect-related energy levels", 
      "GaN LED efficiency falloff", 
      "LED efficiency falloff"
    ], 
    "name": "Mechanism of the GaN LED efficiency falloff with increasing current", 
    "pagination": "794-800", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1028089909"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782610060175"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782610060175", 
      "https://app.dimensions.ai/details/publication/pub.1028089909"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:23", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_518.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782610060175"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782610060175'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782610060175'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782610060175'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782610060175'


 

This table displays all metadata directly associated to this object as RDF triples.

167 TRIPLES      22 PREDICATES      68 URIs      58 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782610060175 schema:about anzsrc-for:02
2 anzsrc-for:0206
3 schema:author Nca0e844e72344f9e8b95b802aaf26bd2
4 schema:citation sg:pub.10.1007/978-3-642-58562-3
5 sg:pub.10.1007/978-3-662-03462-0
6 schema:datePublished 2010-06-27
7 schema:datePublishedReg 2010-06-27
8 schema:description The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf Nc5f96bcd786f4ca48f8a8ea5a6b64aee
13 Neffa7653643b43d2bf0fee8c7a2f379b
14 sg:journal.1136692
15 schema:keywords GaN LED efficiency falloff
16 GaN LED structures
17 InGaN active layer
18 LED efficiency falloff
19 LED structure
20 LEDs
21 active layer
22 band-tail states
23 barrier layer
24 biases
25 carrier leakage
26 components
27 current
28 current density
29 defect-related energy levels
30 density
31 edge
32 efficiency
33 efficiency falloff
34 energy gap
35 energy levels
36 falloff
37 gap
38 internal quantum efficiency falloff
39 layer
40 leakage
41 levels
42 local defect-related energy levels
43 mechanism
44 mobility edge
45 quantum
46 quantum efficiency
47 quantum efficiency falloff
48 quasi-Fermi level
49 results
50 state
51 structure
52 temperature
53 transition
54 tunnel component
55 tunnel transitions
56 schema:name Mechanism of the GaN LED efficiency falloff with increasing current
57 schema:pagination 794-800
58 schema:productId N12c86ae519334ee589bc555c915ba190
59 Nccc9cd99db1347b8a5064a83914a4756
60 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028089909
61 https://doi.org/10.1134/s1063782610060175
62 schema:sdDatePublished 2021-12-01T19:23
63 schema:sdLicense https://scigraph.springernature.com/explorer/license/
64 schema:sdPublisher N3048e723f4f7479fab443d6eb21c9b7e
65 schema:url https://doi.org/10.1134/s1063782610060175
66 sgo:license sg:explorer/license/
67 sgo:sdDataset articles
68 rdf:type schema:ScholarlyArticle
69 N065b42722a11411a8ad586d476cbe68c rdf:first sg:person.012017220123.85
70 rdf:rest N6345ecc5d24c4f8e9a2ac3a428d32157
71 N08585351505d45a8b22a2eaaaf2edb91 rdf:first sg:person.016363450613.62
72 rdf:rest Na5f3b5206491446cb6b309b0347e8dc8
73 N09394dd0693445a0b627ccbf0006f0c2 rdf:first sg:person.07660377413.12
74 rdf:rest N08585351505d45a8b22a2eaaaf2edb91
75 N12c86ae519334ee589bc555c915ba190 schema:name doi
76 schema:value 10.1134/s1063782610060175
77 rdf:type schema:PropertyValue
78 N3048e723f4f7479fab443d6eb21c9b7e schema:name Springer Nature - SN SciGraph project
79 rdf:type schema:Organization
80 N3e780d827a0445aca83b83c2c1297106 rdf:first sg:person.015566070213.08
81 rdf:rest Nfa4bcf470edb4f4ab9156752710039f0
82 N42ff4811a0454b69ad9ac549ffc01545 schema:affiliation grid-institutes:grid.423485.c
83 schema:familyName Lelikov
84 schema:givenName Y. S.
85 rdf:type schema:Person
86 N6345ecc5d24c4f8e9a2ac3a428d32157 rdf:first Neb18787546e9440e871b5d796f7f1494
87 rdf:rest N3e780d827a0445aca83b83c2c1297106
88 Na5f3b5206491446cb6b309b0347e8dc8 rdf:first sg:person.012050721013.05
89 rdf:rest Nb2f9caa4f75a4533a94c5626b0bd53b2
90 Nb2f9caa4f75a4533a94c5626b0bd53b2 rdf:first N42ff4811a0454b69ad9ac549ffc01545
91 rdf:rest N065b42722a11411a8ad586d476cbe68c
92 Nc5f96bcd786f4ca48f8a8ea5a6b64aee schema:issueNumber 6
93 rdf:type schema:PublicationIssue
94 Nca0e844e72344f9e8b95b802aaf26bd2 rdf:first sg:person.013443662013.38
95 rdf:rest N09394dd0693445a0b627ccbf0006f0c2
96 Nccc9cd99db1347b8a5064a83914a4756 schema:name dimensions_id
97 schema:value pub.1028089909
98 rdf:type schema:PropertyValue
99 Neb18787546e9440e871b5d796f7f1494 schema:affiliation grid-institutes:grid.423485.c
100 schema:familyName Rebane
101 schema:givenName Y. T.
102 rdf:type schema:Person
103 Neffa7653643b43d2bf0fee8c7a2f379b schema:volumeNumber 44
104 rdf:type schema:PublicationVolume
105 Nfa4bcf470edb4f4ab9156752710039f0 rdf:first sg:person.014337477245.01
106 rdf:rest rdf:nil
107 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
108 schema:name Physical Sciences
109 rdf:type schema:DefinedTerm
110 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
111 schema:name Quantum Physics
112 rdf:type schema:DefinedTerm
113 sg:journal.1136692 schema:issn 1063-7826
114 1090-6479
115 schema:name Semiconductors
116 schema:publisher Pleiades Publishing
117 rdf:type schema:Periodical
118 sg:person.012017220123.85 schema:affiliation grid-institutes:grid.15447.33
119 schema:familyName Latyshev
120 schema:givenName F. E.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012017220123.85
122 rdf:type schema:Person
123 sg:person.012050721013.05 schema:affiliation grid-institutes:grid.423485.c
124 schema:familyName Zubrilov
125 schema:givenName A. S.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012050721013.05
127 rdf:type schema:Person
128 sg:person.013443662013.38 schema:affiliation grid-institutes:grid.423485.c
129 schema:familyName Bochkareva
130 schema:givenName N. I.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013443662013.38
132 rdf:type schema:Person
133 sg:person.014337477245.01 schema:affiliation grid-institutes:grid.423485.c
134 schema:familyName Shreter
135 schema:givenName Y. G.
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014337477245.01
137 rdf:type schema:Person
138 sg:person.015566070213.08 schema:affiliation grid-institutes:grid.32495.39
139 schema:familyName Tsyuk
140 schema:givenName A. I.
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015566070213.08
142 rdf:type schema:Person
143 sg:person.016363450613.62 schema:affiliation grid-institutes:grid.423485.c
144 schema:familyName Gorbunov
145 schema:givenName R. I.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016363450613.62
147 rdf:type schema:Person
148 sg:person.07660377413.12 schema:affiliation grid-institutes:grid.32495.39
149 schema:familyName Voronenkov
150 schema:givenName V. V.
151 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07660377413.12
152 rdf:type schema:Person
153 sg:pub.10.1007/978-3-642-58562-3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009822908
154 https://doi.org/10.1007/978-3-642-58562-3
155 rdf:type schema:CreativeWork
156 sg:pub.10.1007/978-3-662-03462-0 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042465908
157 https://doi.org/10.1007/978-3-662-03462-0
158 rdf:type schema:CreativeWork
159 grid-institutes:grid.15447.33 schema:alternateName Fock Institute of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia
160 schema:name Fock Institute of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia
161 rdf:type schema:Organization
162 grid-institutes:grid.32495.39 schema:alternateName St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
163 schema:name St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
164 rdf:type schema:Organization
165 grid-institutes:grid.423485.c schema:alternateName Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
166 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
167 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...