Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-01-26

AUTHORS

W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. V. Sakharov, S. O. Usov, A. E. Nikolaev, D. V. Davydov, N. A. Cherkashin, A. F. Tsatsulnikov

ABSTRACT

Effect of pressure in the reactor in the case of growth of active regions in the InGaN/GaN light-emitting diodes by the method of vapor-phase epitaxy from metalorganic compounds on their electroluminescent and structural properties has been studied. It is shown that, as pressure is increased, the InGaN layers become transformed from being continuous in the lateral direction to the layers of separate InGaN islands. This transformation affects both the emission efficiency and the dependence of efficiency on current. More... »

PAGES

123-126

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610010215

DOI

http://dx.doi.org/10.1134/s1063782610010215

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1032803191


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