Ontology type: schema:ScholarlyArticle
2010-01
AUTHORSA. V. Panin, A. R. Shugurov, I. V. Ivonin, Ye. V. Shesterikov
ABSTRACTSilicide formation in thin Cu films subjected to thermal annealing has been investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. It is shown that the periodic stress distribution at the film/barrier interface under elevated temperatures can govern the character of copper silicide formation. The effect of barrier layer material and substrate orientation on the distribution density and shape of Cu3Si crystallites has been studied. More... »
PAGES116-122
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DOIhttp://dx.doi.org/10.1134/s1063782610010203
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