Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-01-26

AUTHORS

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. A. Cherkashin, B. Ya. Ber, D. Yu. Kazantsev, M. N. Mizerov, Hee Seok Park, M. Hytch, F. Hue

ABSTRACT

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency. More... »

PAGES

93-97

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610010161

DOI

http://dx.doi.org/10.1134/s1063782610010161

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023819198


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