The nature of emission of porous silicon produced by chemical etching View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-01-26

AUTHORS

N. E. Korsunskaya, T. R. Stara, L. Yu. Khomenkova, K. V. Svezhentsova, N. N. Melnichenko, F. F. Sizov

ABSTRACT

The structural and luminescence characteristics of porous silicon produced by chemical etching are studied. From analysis of the behavior of luminescence spectra with temperature, it is shown that the luminescence band of porous silicon samples produced by chemical etching presents a superposition of two bands. It is concluded that one of the bands is due to excitonic recombination in amorphous silicon nano-clusters smaller than 3 nm in dimensions and the other band corresponds to recombination of charge carriers via defects in silicon oxide. At room temperature, the latter band prevails. More... »

PAGES

79-83

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782610010136

DOI

http://dx.doi.org/10.1134/s1063782610010136

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053020664


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