Temperature and current dependences of the lasing spectrum’s width of quantum dot lasers View Full Text


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Article Info

DATE

2009-12-12

AUTHORS

A. V. Savelyev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, A. E. Zhukov

ABSTRACT

Dependences of the lasing spectrum’s width of lasers based on arrays of self-organized InAs/InGaAs quantum dots on the temperature and output power have been experimentally studied. A theoretical analysis and simulation of the experimental results have been performed and the possibility of an adequate analytical description of the power and temperature dependences of the lasing line width in terms of the model developed has been demonstrated. It is shown that the main cause of the broadening of the lasing spectrum at low temperatures is the gain saturation in quantum dots as a result of the increase in the average carrier’s escape and capture times. More... »

PAGES

1597

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609120045

DOI

http://dx.doi.org/10.1134/s1063782609120045

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031950379


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