Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs View Full Text


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Article Info

DATE

2009-11-07

AUTHORS

L. K. Markov, I. P. Smirnova, A. S. Pavlyuchenko, E. M. Arakcheeva, M. M. Kulagina

ABSTRACT

A reflecting contact to a p-GaN layer, used in fabrication of blue flip-chip light-emitting diodes, has been produced by deposition of thin indium tin oxide (ITO) films by electron-beam evaporation. The high reflectance of the contact, which exceeds that of a Ni/Ag contact, provides a 15–20% increase in the external quantum efficiency of light-emitting crystals. The forward voltage drops for crystals with an ITO(5 nm)/Ag(220 nm) contact are comparable with the corresponding values for crystals with a Ni(1.5 nm)/Ag(220 nm) contact. The specific resistance of the contact with an ITO layer is 3.7 × 10−3 Ω cm2. It is shown that, for ITO films produced by the given method, the optimal thicknesses providing the best electrical and optical characteristics of the crystals are in the range 2.5–5.0 nm. More... »

PAGES

1521

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609110219

DOI

http://dx.doi.org/10.1134/s1063782609110219

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047088899


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