Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-10

AUTHORS

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

ABSTRACT

Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented. It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests that stress relaxation occurs in the buried state of the quantum dot, rather than at the stage of the formation and growth of an InAs island on the GaAs surface. Models of internal dislocation relaxation of buried quantum dots are presented. More... »

PAGES

1387

References to SciGraph publications

  • 2008. Stress Relaxation Phenomena in Buried Quantum Dots in SELF-ASSEMBLED QUANTUM DOTS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782609100236

    DOI

    http://dx.doi.org/10.1134/s1063782609100236

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1037895194


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