2009-10-10
AUTHORSA. S. Gudovskikh, N. A. Kalyuzhnyy, V. M. Lantratov, S. A. Mintairov, M. Z. Shvarts, V. M. Andreev
ABSTRACTThe effect of the properties of interfaces with Group-III phosphides on characteristics of GaInP solar cells has been studied. It is shown that the large valence band offset at the p-GaAs/p-AlInP interface imposes fundamental limitations on the use of p-AlInP layers as a wide-band-gap window in p-n structures of solar cells operating at ratios of high solar light concentration. It is demonstrated that characteristics of p-n solar cells can be, in principle, improved by using a double-layer wide-band-gap window constituted by p-Al0.8Ga0.2As and p-(Al0.6Ga0.4)0.51In0.49P layers. More... »
PAGES1363
http://scigraph.springernature.com/pub.10.1134/s1063782609100194
DOIhttp://dx.doi.org/10.1134/s1063782609100194
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