Properties of interfaces in GaInP solar cells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-10-10

AUTHORS

A. S. Gudovskikh, N. A. Kalyuzhnyy, V. M. Lantratov, S. A. Mintairov, M. Z. Shvarts, V. M. Andreev

ABSTRACT

The effect of the properties of interfaces with Group-III phosphides on characteristics of GaInP solar cells has been studied. It is shown that the large valence band offset at the p-GaAs/p-AlInP interface imposes fundamental limitations on the use of p-AlInP layers as a wide-band-gap window in p-n structures of solar cells operating at ratios of high solar light concentration. It is demonstrated that characteristics of p-n solar cells can be, in principle, improved by using a double-layer wide-band-gap window constituted by p-Al0.8Ga0.2As and p-(Al0.6Ga0.4)0.51In0.49P layers. More... »

PAGES

1363

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609100194

DOI

http://dx.doi.org/10.1134/s1063782609100194

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021274168


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