Experimental 4H-SiC junction-barrier Schottky (JBS) diodes View Full Text


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Article Info

DATE

2009-09-15

AUTHORS

P. A. Ivanov, I. V. Grekhov, A. S. Potapov, N. D. Il’inskaya, T. P. Samsonova, O. I. Kon’kov

ABSTRACT

4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated with local p–n junctions under the Schottky contact formed by nonequilibrium diffusion of boron. Static and dynamic characteristics of the JBS diodes are compared with those of similar 4H-SiC Schottky diodes. It is shown that, compared with ordinary Schottky diodes, the JBS diodes have leakage currents that are, on average, a factor of 200 lower at the same reverse bias. The reverse recovery charge is the same for both types of diodes and equal to the charge of majority carriers removed from the n-type base region in switching. More... »

PAGES

1209-1212

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378260909019x

DOI

http://dx.doi.org/10.1134/s106378260909019x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1001024045


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