Features of molecular beam epitaxy of the GaN (0001) and GaN (000) layers with the use of different methods of ... View Full Text


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Article Info

DATE

2009-08-13

AUTHORS

A. M. Mizerov, V. N. Jmerik, V. K. Kaibyshev, T. A. Komissarova, S. A. Masalov, S. V. Ivanov

ABSTRACT

The results of comparative studies of the growth kinetics of the GaN layers of different polarity during ammonia molecular beam epitaxy and plasma-assisted molecular beam epitaxy (PA MBE) of nitrogen with the use of sapphire substrates and GaN(000\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \bar 1 $$\end{document})/c-Al2O3 templates grown by gas-phase epitaxy from metalorganic compounds are presented. The possibility is shown of obtaining the GaN layers with an atomically smooth surface during molecular beam epitaxy with plasma activation of nitrogen. For this purpose, it is suggested to carry out the growth in conditions enriched with metal near the mode of formation of the Ga drops at a temperature close to the decomposition temperature of GaN (TS ≈ 760°C). The conclusion is made that an increase in the growth temperature positively affects the structural, optical, and electrical properties of the GaN (000\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ \bar 1 $$\end{document}) layers. A high quality of the GaN (0001) films grown by the PA MBE method at a low temperature of ∼700°C on the GaN/c-Al2O3 templates is shown. More... »

PAGES

1058-1063

References to SciGraph publications

  • 1996. Growth Rate Reduction of GaN Due to Ga Surface Accumulation in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
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    http://scigraph.springernature.com/pub.10.1134/s1063782609080181

    DOI

    http://dx.doi.org/10.1134/s1063782609080181

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