Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts View Full Text


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Article Info

DATE

2009-07-11

AUTHORS

O. V. Aleksandrov, V. V. Kozlovski

ABSTRACT

For the first time, the quantitative model of interaction between silicide-forming metal Ni and single-crystalline SiC is developed on the basis of the mutual diffusion of components and the volume silicide-formation reaction. The model makes it possible to describe satisfactorily the basic properties of the redistribution of components during the thermal annealing and during the proton irradiation of the Ni-SiC system at elevated temperatures, specifically: the presence of an extended reaction zone, an excess of the carbon concentration over the silicon concentration at the interface with the SiC substrate, and the carbon accumulation near the surface. It is shown that the stimulation of the interaction between metal Ni and SiC by the proton irradiation at an elevated temperature occurs due to an increase in the metal diffusivity and in the constants of rates of reactions of solid-phase silicide-formation. An acceleration of metal diffusion is associated with the generation of elementary radiation defects (interstitial atoms and vacancies), while an increase in the constants of rates of solid-phase reactions is attributed to a generation of vacancies, which contribute free volume. More... »

PAGES

885-891

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609070100

DOI

http://dx.doi.org/10.1134/s1063782609070100

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014145010


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