Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs View Full Text


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Article Info

DATE

2009-06-09

AUTHORS

A. V. Sakharov, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, S. O. Usov, V. S. Sizov, G. A. Mikhailovsky, N. A. Cherkashin, M. Hytch, F. Hue, E. V. Yakovlev, A. V. Lobanova, A. F. Tsatsulnikov

ABSTRACT

Processes of active-region formation for green LEDs on the basis of multilayer strained InGaN/GaN nanoheterostructures have been studied. It is shown that the formation of structures of this kind is highly affected by elastic stress relaxation leading to a larger amount of indium incorporated into InGaN layers. For structures emitting in the blue spectral range, an increase in the number of quantum wells (QWs) from 1 to 10 does not lead to stress relaxation or to a shift of the emission wavelength, whereas for structures emitting in the green spectral range, raising the number of QWs from one to five causes a monotonic increase in the emission wavelength. More... »

PAGES

812-817

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609060232

DOI

http://dx.doi.org/10.1134/s1063782609060232

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1033037149


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