Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-06

AUTHORS

V. S. Sizov, A. A. Gutkin, A. V. Sakharov, V. V. Lundin, P. N. Brunkov, A. F. Tsatsul’nikov

ABSTRACT

Structures with InGaN nanolayers within GaN and AlGaN matrices, which constitute active regions of light-emitting devices, have been studied. Spectra and relative intensities of photoluminescence (PL) in the temperature range 20–300 K and the dependence of the position of the PL peak on the energy of the excitation photons have been measured. It is shown that, to account for the temperature dependence of the PL intensity, it is necessary to take into consideration, in addition to the nonradiative recombination via defects in the matrix and in the residual quantum well (RQW), an additional recombination channel with low activation energy, which is presumably associated with defects located close to quantum dots. It is demonstrated that structures with the AlGaN matrix show a larger decrease in the PL intensity upon an increase in temperature from 50 to ∼200 K, compared with structures with the GaN matrix. Analysis of the temperature dependence of the PL intensity in terms of the model that considers these three channels of nonradiative recombination shows that this dependence is associated with a decrease in the carrier’s localization energy relative to the ground state in the RQW. Such a decrease is due to suppression of the phase separation in InGaN layers grown within the AlGaN matrix. This behavior is confirmed by PL measurements at different excitation photon’s energies and leads, in addition to the lower localization energy, a decrease in the concentration of recombination centers is observed for these samples. More... »

PAGES

807-811

Journal

TITLE

Semiconductors

ISSUE

6

VOLUME

43

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782609060220

DOI

http://dx.doi.org/10.1134/s1063782609060220

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006803061


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sizov", 
        "givenName": "V. S.", 
        "id": "sg:person.014637527201.21", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014637527201.21"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gutkin", 
        "givenName": "A. A.", 
        "id": "sg:person.016423303441.91", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "V. V.", 
        "id": "sg:person.013427374503.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brunkov", 
        "givenName": "P. N.", 
        "id": "sg:person.011771360023.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute", 
          "id": "https://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsul\u2019nikov", 
        "givenName": "A. F.", 
        "id": "sg:person.012131633577.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1002/1521-396x(200111)188:1<109::aid-pssa109>3.0.co;2-t", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1030081656"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1527225", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057716611"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.2889444", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057879420"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.48.2412", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060568270"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.48.2412", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060568270"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.60.8276", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060594530"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.60.8276", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060594530"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2009-06", 
    "datePublishedReg": "2009-06-01", 
    "description": "Structures with InGaN nanolayers within GaN and AlGaN matrices, which constitute active regions of light-emitting devices, have been studied. Spectra and relative intensities of photoluminescence (PL) in the temperature range 20\u2013300 K and the dependence of the position of the PL peak on the energy of the excitation photons have been measured. It is shown that, to account for the temperature dependence of the PL intensity, it is necessary to take into consideration, in addition to the nonradiative recombination via defects in the matrix and in the residual quantum well (RQW), an additional recombination channel with low activation energy, which is presumably associated with defects located close to quantum dots. It is demonstrated that structures with the AlGaN matrix show a larger decrease in the PL intensity upon an increase in temperature from 50 to \u223c200 K, compared with structures with the GaN matrix. Analysis of the temperature dependence of the PL intensity in terms of the model that considers these three channels of nonradiative recombination shows that this dependence is associated with a decrease in the carrier\u2019s localization energy relative to the ground state in the RQW. Such a decrease is due to suppression of the phase separation in InGaN layers grown within the AlGaN matrix. This behavior is confirmed by PL measurements at different excitation photon\u2019s energies and leads, in addition to the lower localization energy, a decrease in the concentration of recombination centers is observed for these samples.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782609060220", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "6", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "43"
      }
    ], 
    "name": "Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix", 
    "pagination": "807-811", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "2067dc68d6d948b9caacb7b46e496a455d749077b9937df1958a26e86eac7dc0"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782609060220"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1006803061"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782609060220", 
      "https://app.dimensions.ai/details/publication/pub.1006803061"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T00:14", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8695_00000503.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782609060220"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782609060220'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782609060220'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782609060220'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782609060220'


 

This table displays all metadata directly associated to this object as RDF triples.

112 TRIPLES      21 PREDICATES      32 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782609060220 schema:about anzsrc-for:02
2 anzsrc-for:0206
3 schema:author N67a41b297b094cc19b3944368a294586
4 schema:citation https://doi.org/10.1002/1521-396x(200111)188:1<109::aid-pssa109>3.0.co;2-t
5 https://doi.org/10.1063/1.1527225
6 https://doi.org/10.1063/1.2889444
7 https://doi.org/10.1103/physrevb.48.2412
8 https://doi.org/10.1103/physrevb.60.8276
9 schema:datePublished 2009-06
10 schema:datePublishedReg 2009-06-01
11 schema:description Structures with InGaN nanolayers within GaN and AlGaN matrices, which constitute active regions of light-emitting devices, have been studied. Spectra and relative intensities of photoluminescence (PL) in the temperature range 20–300 K and the dependence of the position of the PL peak on the energy of the excitation photons have been measured. It is shown that, to account for the temperature dependence of the PL intensity, it is necessary to take into consideration, in addition to the nonradiative recombination via defects in the matrix and in the residual quantum well (RQW), an additional recombination channel with low activation energy, which is presumably associated with defects located close to quantum dots. It is demonstrated that structures with the AlGaN matrix show a larger decrease in the PL intensity upon an increase in temperature from 50 to ∼200 K, compared with structures with the GaN matrix. Analysis of the temperature dependence of the PL intensity in terms of the model that considers these three channels of nonradiative recombination shows that this dependence is associated with a decrease in the carrier’s localization energy relative to the ground state in the RQW. Such a decrease is due to suppression of the phase separation in InGaN layers grown within the AlGaN matrix. This behavior is confirmed by PL measurements at different excitation photon’s energies and leads, in addition to the lower localization energy, a decrease in the concentration of recombination centers is observed for these samples.
12 schema:genre research_article
13 schema:inLanguage en
14 schema:isAccessibleForFree false
15 schema:isPartOf N1650315a1ad2442daf03ed1f76b89a35
16 N849e3b0aed76450ba87f9ec9e12bc577
17 sg:journal.1136692
18 schema:name Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
19 schema:pagination 807-811
20 schema:productId N22929eaabf504815a6bc114d75f5a270
21 Na80e3580b59440edba9c555f99d01da6
22 Ncf59588c8385447793f746f627dc398d
23 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006803061
24 https://doi.org/10.1134/s1063782609060220
25 schema:sdDatePublished 2019-04-11T00:14
26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
27 schema:sdPublisher N054633e4d57f47b3a38a0a044a18f825
28 schema:url http://link.springer.com/10.1134%2FS1063782609060220
29 sgo:license sg:explorer/license/
30 sgo:sdDataset articles
31 rdf:type schema:ScholarlyArticle
32 N054633e4d57f47b3a38a0a044a18f825 schema:name Springer Nature - SN SciGraph project
33 rdf:type schema:Organization
34 N1650315a1ad2442daf03ed1f76b89a35 schema:issueNumber 6
35 rdf:type schema:PublicationIssue
36 N22929eaabf504815a6bc114d75f5a270 schema:name readcube_id
37 schema:value 2067dc68d6d948b9caacb7b46e496a455d749077b9937df1958a26e86eac7dc0
38 rdf:type schema:PropertyValue
39 N3a2c02620a3f4b12b7d2ac61d18ee306 rdf:first sg:person.011771360023.05
40 rdf:rest N700915600e2c46cf8c26de74da03691d
41 N5cd3e834a1dd4960b4ef5f88ae6ac4aa rdf:first sg:person.016423303441.91
42 rdf:rest N5d0ece16897a4034b234de3fdf819c86
43 N5d0ece16897a4034b234de3fdf819c86 rdf:first sg:person.010201114167.20
44 rdf:rest N67f935a0d7f0493a9153fd0888381086
45 N67a41b297b094cc19b3944368a294586 rdf:first sg:person.014637527201.21
46 rdf:rest N5cd3e834a1dd4960b4ef5f88ae6ac4aa
47 N67f935a0d7f0493a9153fd0888381086 rdf:first sg:person.013427374503.16
48 rdf:rest N3a2c02620a3f4b12b7d2ac61d18ee306
49 N700915600e2c46cf8c26de74da03691d rdf:first sg:person.012131633577.53
50 rdf:rest rdf:nil
51 N849e3b0aed76450ba87f9ec9e12bc577 schema:volumeNumber 43
52 rdf:type schema:PublicationVolume
53 Na80e3580b59440edba9c555f99d01da6 schema:name dimensions_id
54 schema:value pub.1006803061
55 rdf:type schema:PropertyValue
56 Ncf59588c8385447793f746f627dc398d schema:name doi
57 schema:value 10.1134/s1063782609060220
58 rdf:type schema:PropertyValue
59 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
60 schema:name Physical Sciences
61 rdf:type schema:DefinedTerm
62 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
63 schema:name Quantum Physics
64 rdf:type schema:DefinedTerm
65 sg:journal.1136692 schema:issn 1063-7826
66 1090-6479
67 schema:name Semiconductors
68 rdf:type schema:Periodical
69 sg:person.010201114167.20 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
70 schema:familyName Sakharov
71 schema:givenName A. V.
72 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
73 rdf:type schema:Person
74 sg:person.011771360023.05 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
75 schema:familyName Brunkov
76 schema:givenName P. N.
77 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05
78 rdf:type schema:Person
79 sg:person.012131633577.53 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
80 schema:familyName Tsatsul’nikov
81 schema:givenName A. F.
82 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012131633577.53
83 rdf:type schema:Person
84 sg:person.013427374503.16 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
85 schema:familyName Lundin
86 schema:givenName V. V.
87 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013427374503.16
88 rdf:type schema:Person
89 sg:person.014637527201.21 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
90 schema:familyName Sizov
91 schema:givenName V. S.
92 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014637527201.21
93 rdf:type schema:Person
94 sg:person.016423303441.91 schema:affiliation https://www.grid.ac/institutes/grid.423485.c
95 schema:familyName Gutkin
96 schema:givenName A. A.
97 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016423303441.91
98 rdf:type schema:Person
99 https://doi.org/10.1002/1521-396x(200111)188:1<109::aid-pssa109>3.0.co;2-t schema:sameAs https://app.dimensions.ai/details/publication/pub.1030081656
100 rdf:type schema:CreativeWork
101 https://doi.org/10.1063/1.1527225 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057716611
102 rdf:type schema:CreativeWork
103 https://doi.org/10.1063/1.2889444 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057879420
104 rdf:type schema:CreativeWork
105 https://doi.org/10.1103/physrevb.48.2412 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060568270
106 rdf:type schema:CreativeWork
107 https://doi.org/10.1103/physrevb.60.8276 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060594530
108 rdf:type schema:CreativeWork
109 https://www.grid.ac/institutes/grid.423485.c schema:alternateName Ioffe Institute
110 schema:name Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
111 Scientific-Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
112 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...